SGU2N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. • • • • High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 1.2A High input impedance CO-PAK, IGBT with FRD : trr = 45ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G GC E I-PAK Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL E TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGU2N60UFD 600 ± 20 2.4 1.2 10 1.5 12 25 10 -55 to +150 -55 to +150 Units V V A A A A A W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2002 Fairchild Semiconductor Corporation Typ. ---- Max. 5.0 5.0 110 Units °C/W °C/W °C/W SGU2N60UFD Rev. A1 SGU2N60UFD IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA 3.5 --- 4.5 2.1 2.6 6.5 2.6 -- V V V ---- 98 18 4 ---- pF pF pF ------------------- 15 20 80 95 30 13 43 19 24 115 176 36 27 63 9 3 1.5 7.5 --130 160 --70 --200 250 --100 14 5 3 -- ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH Min. -- Typ. 1.4 Max. 1.7 Units TC = 100°C -- 1.3 -- TC = 25°C -- 45 80 TC = 100°C -- 75 -- TC = 25°C -- 1.5 3.0 TC = 100°C -- 2.5 -- TC = 25°C -- 60 135 TC = 100°C -- 120 -- Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 1.2mA, VCE = VGE IC = 1.2A, VGE = 15V IC = 2.4A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300 V, IC = 1.2A, RG = 200Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 1.2A, RG = 200Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 1.2A, VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge ©2002 Fairchild Semiconductor Corporation IF = 2A = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 2A, di/dt = 200A/us V ns A nC SGU2N60UFD Rev. A1 SGU2N60UFD Electrical Characteristics of the IGBT T 6 Common Emitter T C = 25℃ 5 Collector Current, IC [A] Collector Current, IC [A] Common Emitter VGE = 15V TC = 25℃ TC = 125℃ 20V 10 15V 8 12V 6 VGE = 10V 4 2 4 3 2 1 0 0 0 2 4 6 8 0.5 1 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, V CE [V] Fig 2. Typical Saturation Voltage Characteristics Fig 1. Typical Output Characteristics 4 3.0 V CC = 300V Load Current : peak of square wave Common Emitter V GE = 15V 2.5 2.4A 3 Load Current [A] Collector - Emitter Voltage, VCE [V] SGU2N60UFD 12 1.2A 2 IC = 0.6A 2.0 1.5 1.0 1 0.5 Duty cycle : 50% TC = 100℃ Power Dissipation = 4W 0.0 0 0 30 60 90 120 150 0.1 1 Case Temperature, TC [℃] 10 100 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC = 125℃ Collector - Emitter Voltage, VCE [V] Common Emitter T C = 25℃ Collector - Emitter Voltage, VCE [V] 1000 Frequency [KHz] 16 12 8 4 IC = 0.6A 1.2A 2.4A 0 16 12 8 2.4A 4 1.2A IC = 0.6A 0 0 4 8 12 16 Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE SGU2N60UFD Rev. A1 100 Common Emitter V GE = 0V, f = 1MHz T C = 25℃ Common Emitter V CC = 300V, VGE = ± 15V IC = 1.2A T C = 25℃ T C = 125℃ Cies Switching Time [ns] Capacitance [pF] 120 SGU2N60UFD 160 80 Coes 40 Ton Tr Cres 0 10 1 10 30 10 100 Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 100 Common Emitter V CC = 300V, V GE = ± 15V IC = 1.2A T C = 25℃ T C = 125℃ Common Emitter VCC = 300V, VGE = ± 15V IC = 1.2A TC = 25℃ TC = 125℃ Toff Eon Switching Loss [uJ] Switching Time [ns] 600 500 Gate Resistance, R G [Ω ] Collector - Emitter Voltage, V CE [V] Tf Toff 100 Tf Eoff Eoff 10 50 5 10 100 500 10 100 Gate Resistance, RG [Ω ] 500 Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 100 1000 Common Emitter VCC = 300V, VGE = ± 15V RG = 200 Ω TC = 25℃ TC = 125℃ Switching Time [ns] Switching Time [ns] Common Emitter V CC = 300V, V GE = ± 15V RG = 200Ω TC = 25℃ TC = 125℃ Ton Toff Toff Tf Tf 100 Tr 10 0.5 1.0 1.5 2.0 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation 2.5 0.5 1.0 1.5 2.0 2.5 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current SGU2N60UFD Rev. A1 Common Emitter RL = 250 Ω Tc = 25℃ Gate - Emitter Voltage, VGE [ V ] Common Emitter V CC = 300V, VGE = ± 15V RG = 200 Ω T C = 25℃ T C = 125℃ Switching Loss [uJ] SGU2N60UFD 15 100 Eon Eon Eoff 10 Eoff 0.5 12 9 300 V 6 200 V V CE = 100 V 3 0 1.0 1.5 2.0 2.5 0 2 4 6 8 10 Gate Charge, Qg [ nC ] Collector Current, IC [A] Fig 14. Gate Charge Characteristics Fig 13. Switching Loss vs. Collector Current 30 20 IC MAX. (Pulsed) 10 10 Collector Current, IC [A] Collector Current, I C [A] 50us 100us IC MAX. (Continuous) 1㎳ 1 DC Operation 0.1 0.01 Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 0.3 1 Safe Operating Area o VGE =20V, TC=100 C 1 10 100 0.1 1000 1 10 Collector-Emitter Voltage, V CE [V] 100 1000 Collector-Emitter Voltage, V CE [V] Fig 16. Turn-Off SOA Characteristics Fig 15. SOA Characteristics Thermal Response, Zthjc [℃/W] 10 0.5 1 0.2 0.1 0.05 0.02 0.1 Pdm 0.01 t1 single pulse t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 0.01 10 -5 10 -4 10 -3 -2 10 -1 10 0 10 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGU2N60UFD Rev. A1 TC = 25℃ TC = 100℃ V R = 200V IF = 2A T C = 25℃ T C = 100℃ Reverse Recovery Current, Irr [A] Forward Current, I F [A] 10 1 0.1 1 0 1 2 100 3 Forward Voltage Drop, VFM [V] 500 di/dt [A/us] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 100 120 V R = 200V IF = 2A T C = 25℃ T C = 100℃ 100 Reverce Recovery Time, t rr [ns] Stored Recovery Charge, Qrr [nC] SGU2N60UFD 10 30 80 60 40 20 0 100 500 di/dt [A/us] Fig 20. Stored Charge ©2002 Fairchild Semiconductor Corporation V R = 200V IF = 2A TC = 25℃ TC = 100℃ 80 60 40 20 0 100 500 di/dt [A/us] Fig 21. Reverse Recovery Time SGU2N60UFD Rev. A1 I-PAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 0.76 ±0.10 2.30TYP [2.30±0.20] 0.50 ±0.10 16.10 ±0.30 6.10 ±0.20 0.70 ±0.20 (0.50) 9.30 ±0.30 MAX0.96 (4.34) 1.80 ±0.20 0.80 ±0.10 0.60 ±0.20 (0.50) 2.30TYP [2.30±0.20] 0.50 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGU2N60UFD Rev. A1 SGU2N60UFD Package Dimension TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H5