FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A High input impedance Built-in fast recovery diode Applications Home appliances, induction heaters, IH JAR, and microwave ovens. C G TO-264 G C Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL E E TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGL40N150D 1500 ± 25 40 20 120 10 100 200 80 -55 to +150 -55 to +150 Units V V A A A A A W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2002 Fairchild Semiconductor Corporation Typ. ---- Max. 0.625 0.83 25 Units °C/W °C/W °C/W FGL40N150D Rev. A1 FGL40N150D IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1500 --- ---- -3.0 ± 100 V mA nA IC = 40mA, VCE = VGE 3.5 5.0 7.5 V IC = 40A, VGE = 15V 2.5 3.5 4.5 V VCE = 30V, VGE = 0V, f = 1MHz ---- 2450 220 75 ---- pF pF pF -------- 100 350 200 100 110 15 40 200 700 400 300 170 25 60 ns ns ns ns nC nC nC Min. -- Typ. 1.3 Max. 1.8 Units V -- 170 300 ns Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC = 40A, RG = 51Ω, VGE = 15V, Resistive Load, TC = 25°C VCE = 600 V, IC = 40A, VGE = 15V Electrical Characteristics of DIODE T C = 25°C unless otherwise noted Symbol VFM Parameter Diode Forward Voltage IF = 10A trr Diode Reverse Recovery Time IF = 10A, di/dt = 200A/us ©2002 Fairchild Semiconductor Corporation Test Conditions FGL40N150D Rev. A1 FGL40N150D Electrical Characteristics of the IGBT T 20V Common Emitter 15V T C = 25 C 100 o TC = 25 C 8V o Collector Current, IC [A] Collector Current, IC [A] 80 Common Emitter VGE = 15V 10V o 60 40 VGE = 6V 20 TC = 125 C 80 60 40 20 0 0 0 2 4 6 8 0 Collector - Emitter Voltage, VCE [V] 2 4 6 10 Fig 2. Typical Output Characteristics 6 5000 Common Emitter VGE = 15V Common Emitter VGE =0V, f=1MHz 5 o Tc=25 C 4000 IC = 80A Capacitance [pF] Collector - Emitter Voltage, VCE [V] 8 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics 4 IC = 40A 3 IC = 20A 2 Cies 3000 2000 Coes 1000 Cres 1 0 25 50 75 100 125 150 1 10 Collector - Emitter Voltage, VCE [V] o Case Temperature, TC [ C] Fig 4. Typical Capacitance vs. Collector to Emitter Voltage Fig 3. Collector to Emitter Saturation Voltage vs. Case Temperature 20 20 Common Emitter Common Emitter 0 o T C = 125 C Collector - Emitter Voltage, VCE[V] T C = 25 C Collector - Emitter Voltage, VCE[V] FGL40N150D 120 100 16 12 8 80A 40A 4 20A 16 12 8 80A 40A 4 20A 0 0 0 4 8 12 16 Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE FGL40N150D Rev. A1 Common Emitter VGE = ± 15V, RG = 51Ω 1000 o o TC = 25 C o TC = 125 C TC = 25 C o TC = 125 C 1000 tr Switching Time [ns] Switching Time [ns] FGL40N150D Common Emitter VGE = ± 15V, RG = 51Ω tf 100 td(off) td(on) 100 10 10 20 30 40 50 60 70 80 10 90 20 30 Fig 7. Turn-Off Characteristics vs. Collector Current TC = 25 C 70 80 90 o TC = 25 C o TC = 125 C Switching Time [ns] Switching Loss [µJ] 60 Common Emitter VCC = 600V, VGE = ± 15V IC = 40A o Eoff 1000 50 Fig 8. Turn-On Characteristics vs. Collector Current Common Emitter VG E = ± 15V, RG = 51Ω 10000 40 Collector Current, IC [A] Collector Current, IC [A] Eon 1000 o TC = 125 C tf 100 td(off) 100 10 20 30 40 50 60 70 80 10 90 100 Gate Resistance, RG [Ω ] Collector Current, IC [A] Fig 10. Turn-Off Characteristics vs. Gate Resistance Fig 9. Switching Loss vs. Collector Current 1000 Common Emitter VCC = 600V, VGE = ± 15V IC = 40A 10000 o o o tr TC = 125 C td(on) 100 TC = 25 C Switching Loss [µJ] Switching Time [ns] TC = 25 C Common Emitter VCC = 600V, VGE = ± 15V IC = 40A o TC = 125 C Eoff 1000 Eon 10 10 100 Gate Resistance, RG [Ω ] Fig 11. Turn-On Characteristics vs. Gate Resistance ©2002 Fairchild Semiconductor Corporation 10 100 Gate Resistance, RG [Ω ] Fig 12. Switching Loss vs. Gate Resistance FGL40N150D Rev. A1 FGL40N150D 16 Common Emitter R L = 15Ω , V CC = 600V 14 Ic MAX (Pulsed) 100 Ic MAX (Continuous) 100µ s 10 8 6 4 10 1ms DC Operation 1 Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 2 0.01 0 0 25 50 75 100 125 0.1 150 1 100 1000 Fig 14. SOA Characteristics 500 300 450 270 Reverse Recovery Time, t rr [ns] Reverse Recovery Time, t rr [ns] Fig 13. Gate Charge Characteristics 400 350 300 250 10 Collector - Emitter Voltage, VCE [V] Gate Charge, Qg [nC] IF = 10A 200 150 100 50 240 di/dt = 50A/us 210 180 100A/us 150 200A/us 120 90 60 30 0 0 50 100 150 200 250 0 300 1 2 3 4 5 6 7 8 9 10 Forward Current, IF [A] di/dt [A/us] Fig 15. Typical Trr vs. di/dt Fig 16. Typical Trr vs. Forward Current 1000 Instantaneous Forward Current, I F [A] 100 100 Reverse Current, I R [uA] 50µ s T C = 25 C 12 Collector Current, I C [A] Gate - Emitter Voltage, VGE [V] o T C = 125℃ 10 100℃ 1 25℃ 0.1 0.01 10 TC =125℃ 25℃ 1 0.1 1E-3 300.0 600.0 900.0 1.2k 1.5k Reverse Voltage, V R [V] Fig 17. Reverse Current vs. Reverse Voltage ©2002 Fairchild Semiconductor Corporation 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Voltage, V F [V] Fig 18. Typical Forward Voltage Drop vs. Forward Current FGL40N150D Rev. A1 FGL40N150D Package Dimension (8.30) (1.00) (2.00) (7.00) 20.00 ±0.20 2.50 ±0.10 4.90 ±0.20 (1.50) (1.50) 2.50 ±0.20 3.00 ±0.20 (1.50) 20.00 ±0.50 (7.00) (2.00) (11.00) 1.50 ±0.20 ) .20 .00 0 ±0 0) 2.0 (R (R1 (0.50) ø3.3 (9.00) (9.00) (8.30) (4.00) 20.00 ±0.20 6.00 ±0.20 TO-264 +0.25 1.00 –0.10 +0.25 0.60 –0.10 2.80 ±0.30 (2.80) 5.45TYP [5.45 ±0.30] (0.15) (1.50) 3.50 ±0.20 5.00 ±0.20 5.45TYP [5.45 ±0.30] Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation FGL40N150D Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H5