Inchange Semiconductor Product Specification BU931T Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Fast switching speed ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions.. ·High voltage ignition coil driver PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 10 A ICM Collector current (peak) 15 A IB Base current 1 A IBM Base current 5 A Ptot Total power dissipation 125 W 175 ℃ -65~175 ℃ MAX UNIT 1.2 ℃/W Tj Tstg TC=25℃ Max.operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification BU931T Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=10mH VCEsat-1 Collector-emitter saturation voltage IC=7A ;IB=0.07A 1.6 V VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=0.1 A 1.8 V VBEsat-1 Base-emitter saturation voltage IC=7A ;IB=0.07A 2.2 V VBEsat-2 Base-emitter saturation voltage IC=8A; IB=0.1 A 2.4 V ICES Collector cut-off current VCE =500V; VBE=0; Tj=125℃ 10 500 μA ICEO Collector cut-off current VCE =450V; IB=0; Tj=125℃ 0.1 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 20 mA hFE DC current gain IC=5A ; VCE=10V VF Diode forward voltage IF=10A 2.5 V 2 MIN TYP. MAX 400 UNIT V 300 Inchange Semiconductor Product Specification BU931T Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3