ISC BU407D

Inchange Semiconductor
Product Specification
BU406D BU407D
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·High voltage
·Fast switching speed
·Low saturation voltage
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection output
stages of TV’s and CTV’s circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolut maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
BU406D
VCBO
Collector-base voltage
200
Open base
BU407D
VEBO
Emitter-base voltage
IC
V
330
BU406D
Collector-emitter voltage
UNIT
400
Open emitter
BU407D
VCEO
VALUE
V
150
6
V
Collector current (DC)
7
A
ICM
Collector current-Peak
10
A
IB
Base current
4
A
60
W
150
℃
-65~150
℃
MAX
UNIT
2.08
℃/W
Ptot
Tj
Tstg
Open collector
Total power dissipation
TC=25℃
Maximum operating junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
BU406D BU407D
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BU406D
VCEO(SUS)
Collector-emitter
sustaining voltage
MIN
TYP.
MAX
UNIT
200
IC=100mA ; IB=0
V
150
BU407D
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=0.65A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=0.65A
1.3
V
15
mA
400
mA
1.5
V
BU406D
ICEV
VCE=400V; VBE=-1.5V
Collector
cut-off current
BU407D
VCE=330V; VBE=-1.5V
IEBO
Emitter cut-off current
VEB=6.0V; IC=0
hFE
DC current gain
IC=2A ; VCE=5V
VF
Diode forward voltage
IF=5A
fT
Transition frequency
IC=0.5A ;VCE=10V;f=1.0MHz
tf
Fall time
IC=5A ;VCC=40V
IBend=0.65A
2
15
10
MHz
0.75
μs
Inchange Semiconductor
Product Specification
BU406D BU407D
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3