SAVANTIC BU941

SavantIC Semiconductor
Product Specification
BU941
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage
·DARLINGTON
APPLICATIONS
·High ruggedness electronic ignitions.
·High voltage ignition coil driver
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
15
A
ICM
Collector current-peak
30
A
IB
Base current
1
A
IBM
Base current (peak)
5
A
PT
Total power dissipation
180
W
Tj
Junction temperature
-65~200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
UNIT
0.97
/W
SavantIC Semiconductor
Product Specification
BU941
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0;L=10mH
VCE(sat-1)
Collector-emitter saturation voltage
IC=8 A;IB=100mA
1.6
V
VCE(sat-2)
Collector-emitter saturation voltage
IC=10 A;IB=250mA
1.8
V
VCE(sat-3)
Collector-emitter saturation voltage
IC=12 A;IB=300mA
2.0
V
VBE(sat-1)
Base-emitter saturation voltage
IC=8 A;IB=100mA
2.2
V
VBE(sat-2)
Base-emitter saturation voltage
IC=10 A;IB=250mA
2.5
V
VBE(sat-3)
Base-emitter saturation voltage
IC=12 A;IB=300mA
2.7
V
ICES
Collector cut-off current
VCE=500V;VBE=0
Tj=125
0.1
0.5
mA
ICEO
Collector cut-off current
VCE=450V;IB=0
Tj=125
0.1
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
20
mA
hFE
DC current gain
IC=5A ; VCE=10V
VF
Diode forward voltage
IF=10A
2.5
V
2
MIN
TYP.
MAX
400
UNIT
V
300
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BU941