ISC BU505

Inchange Semiconductor
Product Specification
BU505
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220C package
・High voltage,high speed-switching
APPLICATIONS
・For horizontal deflection circuits
of color TV receivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
5
V
2.5
A
IC
Collector current
ICM
Collector current (peak)
4
A
IB
Base current
1
A
IBM
Base current(peak)
2
A
Ptot
Total power dissipation
75
W
150
℃
-65~150
℃
MAX
UNIT
1.67
℃/W
Tj
Tstg
TC=25℃
Max.operating junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
Rth j-case
PARAMETER
Thermal resistance junction case
Inchange Semiconductor
Product Specification
BU505
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1 A ;IB=0;L=25mH
700
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.9 A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.9 A
1.3
V
hFE
DC current gain
IC=0.1A ;VCE=5V
ICES
Collector cut-off current
VCE =1500V;VBE=0;
TC=125℃
0.15
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
fT
Transition frequency
IC=0.1A ;VCE=5V
Is/b
Second breakdown current
VCE=120V;t=200μs
2
TYP.
UNIT
V
6
30
7
2
MAX
MHz
A
Inchange Semiconductor
Product Specification
BU505
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3