Inchange Semiconductor Product Specification BU505 Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・High voltage,high speed-switching APPLICATIONS ・For horizontal deflection circuits of color TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V 2.5 A IC Collector current ICM Collector current (peak) 4 A IB Base current 1 A IBM Base current(peak) 2 A Ptot Total power dissipation 75 W 150 ℃ -65~150 ℃ MAX UNIT 1.67 ℃/W Tj Tstg TC=25℃ Max.operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification BU505 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=25mH 700 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.9 A 5.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.9 A 1.3 V hFE DC current gain IC=0.1A ;VCE=5V ICES Collector cut-off current VCE =1500V;VBE=0; TC=125℃ 0.15 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA fT Transition frequency IC=0.1A ;VCE=5V Is/b Second breakdown current VCE=120V;t=200μs 2 TYP. UNIT V 6 30 7 2 MAX MHz A Inchange Semiconductor Product Specification BU505 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3