ISC MJH10012

Inchange Semiconductor
Product Specification
MJH10012
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage,high current
・DARLINGTON
APPLICATIONS
・Automotive ignition
・Switching regulator
・Motor control applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Abolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
600
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
8
V
IC
Collector current
10
A
ICP
Collector current-peak
15
A
IB
Base current
2
A
PC
Collector power dissipation
118
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
VALUE
UNIT
0.95
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
MJH10012
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=3A; IB=0.6A
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=6A; IB=0.6A
2.0
V
VCEsat-3
Collector-emitter saturation voltage
IC=10A; IB=2A
2.5
V
VBEsat-1
Base-emitter saturation voltage
IC=6A; IB=0.6A
2.5
V
VBEsat-2
Base-emitter saturation voltage
IC=10A; IB=2A
3.0
V
VBE
Base-emitter on voltage
IC=10A ; VCE=6V
2.8
V
ICBO
Collector cut-off current
VCB=600V; IE=0
1
mA
ICEO
Collector cut-off current
VCE=400V; IB=0
1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
40
mA
hFE-1
DC current gain
IC=3A ; VCE=6V
300
hFE-2
DC current gain
IC=6A ; VCE=6V
100
hFE-3
DC current gain
IC=10A ; VCE=6V
20
VF
Diode forward voltage
IF=10A
ts
Storage time
tf
Fall time
400
V
2000
3.5
V
15
μs
15
μs
IC=6.0A ; VCC=12V
IB1=IB2=0.3A
2
UNIT
Inchange Semiconductor
Product Specification
MJH10012
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
MJH10012
Silicon NPN Power Transistors
4