isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV46FI DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) ·High Speed Switching APPLICATIONS ·Designed for high voltage, fast switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 850 V VCEX Collector-Emitter Voltage VBE= -2.5V 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 30 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.12 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV46FI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.7A 5.0 V Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.3 V ICER Collector Cutoff Current VCE= 850V; RBE=10Ω VCE= 850V; RBE=10Ω;TC=125℃ 0.1 1.0 mA ICEX Collector Cutoff Current VCE= 850V; VBE=-2.5V VCE= 850V; VBE=-2.5V;Tj= 125℃ 0.3 2.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA 1.0 μs 3.0 μs 0.8 μs VBE(sat) CONDITIONS MIN TYP. MAX 400 UNIT V Switching Times ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 2.5A;IB1=-IB2= 0.5A;VCC= 150V