isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX12 DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability APPLICATIONS ·Power switching circuits ·Motor control Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEX Collector-Emitter Voltage VBE= -1.5V 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 25 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX12 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 1.25A 1.5 V Base-Emitter Saturation Voltage IC= 10A ;IB= 1.25A 1.5 V ICEO Collector Cutoff Current VCE= 200V; IB= 0 1.5 mA ICEX Collector Cutoff Current VCE= 300V;VBE= -1.5V VCE= 300V;VBE= -1.5V;TC=125℃ 1.5 6.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 5A ; VCE= 4V 20 hFE-2 DC Current Gain IC= 10A ; VCE= 4V 10 Current-Gain—Bandwidth Product IC= 1A; VCE= 15V, ftest= 10MHz 8 VBE(sat) fT CONDITIONS MIN TYP. MAX 250 B UNIT V 60 MHz Switching Times ton Turn-on Time ts Storage Time tf Fall Time IC= 10A ;IB1= 1.25A; VCC= 150V 1.0 μs 2.0 μs 0.5 μs IC= 10A ;IB1= -IB2= 1.25A; VCC= 150V isc Website：www.iscsemi.cn