ISC IRFZ48N

isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRFZ48N
FEATURES
·Drain Current –ID= 64A@ TC=25℃
·Drain Source Voltage: VDSS= 55V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.014Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
VALUE
UNIT
55
V
±20
V
ID
Drain Current-Continuous
64
A
IDM
Drain Current-Single Pluse
210
A
PD
Total Dissipation @TC=25℃
130
W
TJ
Max. Operating Junction Temperature
175
℃
-55~175
℃
MAX
UNIT
1.15
℃/W
62
℃/W
Tstg
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance, Junction to Case
Rth j-a
Thermal Resistance, Junction to Ambient
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRFZ48N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)DSS
PARAMETER
CONDITIONS
MIN
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
55
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
RDS(on)
Drain-Source On-Resistance
IGSS
MAX
UNIT
V
4
V
VGS= 10V; ID= 32A
0.014
Ω
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 55V; VGS= 0
VDS= 55V; VGS= 0; Tj= 150℃
25
250
μA
VSD
Forward On-Voltage
IS= 32A; VGS= 0
1.3
V
·
isc Website:www.iscsemi.cn