isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48N FEATURES ·Drain Current –ID= 64A@ TC=25℃ ·Drain Source Voltage: VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.014Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous VALUE UNIT 55 V ±20 V ID Drain Current-Continuous 64 A IDM Drain Current-Single Pluse 210 A PD Total Dissipation @TC=25℃ 130 W TJ Max. Operating Junction Temperature 175 ℃ -55~175 ℃ MAX UNIT 1.15 ℃/W 62 ℃/W Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 55 VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 RDS(on) Drain-Source On-Resistance IGSS MAX UNIT V 4 V VGS= 10V; ID= 32A 0.014 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 55V; VGS= 0 VDS= 55V; VGS= 0; Tj= 150℃ 25 250 μA VSD Forward On-Voltage IS= 32A; VGS= 0 1.3 V · isc Website：www.iscsemi.cn