isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor 7N60 ·FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply. SYMBOL ww PARAMETER w VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous n c . i m e s c s .i ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) VALUE 600 UNIT V ±20 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Plused 28 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor 7N60 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS · PARAMETER CONDITIONS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance IGSS MIN MAX 600 V 4 V VGS= 10V; ID= 3.5A 1.0 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 1 μA VSD Forward On-Voltage IS= 7A; VGS= 0 1.8 V n c . i m e s c s i . w w w isc Website：www.iscsemi.cn 2 UNIT