isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors MJ2955 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain: hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage: VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055 APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCER Collector-Emitter Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -15 A IB Base Current -7 A PC Collector Power Dissipation @TC=25℃ 115 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.52 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors MJ2955 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0 -60 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; RBE= 100Ω -70 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A -3.0 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -4V -1.5 V ICEO Collector Cutoff Current VCE= -30V; IB= 0 -0.7 mA ICEX Collector Cutoff Current VCE= -100V; VBE(off)= -1.5V VCE= -100V; VBE(off)= -1.5V,TC= 150℃ -1.0 -5.0 mA IEBO Emitter Cutoff Current VEB= -7.0V; IC=0 -5.0 mA hFE-1 DC Current Gain IC= -4A ; VCE= -4V 20 hFE-2 DC Current Gain IC= -10A ; VCE= -4V 5.0 Second Breakdown Collector Current with Base Forward Biased VCE= -40V,t= 1.0s,Nonrepetitive Current Gain-Bandwidth Product IC= -0.5A ; VCE= -10V;ftest= 1.0MHz Is/b fT isc Website：www.iscsemi.cn B B 2 70 -2.87 A 2.5 MHz INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Website：www.iscsemi.cn isc Product Specification MJ2955