isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP29 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat) = 0.7V(Max.)@IC= 1.0A ·Complement to Type TIP30 APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Pulse 3 A IB Base Current 0.4 A PC Collector Power Dissipation TC=25℃ 30 W Tj Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP29 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A 0.7 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 4V 1.3 V ICES Collector Cutoff Current VCE= 40V; VEB= 0 0.2 mA ICEO Collector Cutoff Current VCE= 30V; IB= 0 0.3 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.2A; VCE= 4V 40 hFE-2 DC Current Gain IC= 1A; VCE= 4V 15 Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 10V; f= 1MHz 3 fT isc Website：www.iscsemi.cn CONDITIONS MIN MAX 40 UNIT V 75 MHz