isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N4913 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 5A ·DC Current Gain: hFE= 25-100 @IC= 2.5A ·Complement to Type 2N4904 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous 1 A PC Collector Power Dissipation@TC=25℃ 87.5 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 2.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N4913 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VBE(on) Base-Emitter On Voltage IC= 2.5A; VCE= 2V 1.4 V ICEO Collector Cutoff Current VCE= 40V; IB= 0 1.0 mA ICBO Collector Cutoff Current VCB= 40V; IE= 0 0.1 mA ICEV Collector Cutoff Current VCE= 40V; VBE(off)= -1.5V VCE= 40V; VBE(off)= -1.5V, TC=150℃ 0.1 2.0 mA IEBO Emitter Cutoff Current VEB=-5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 2.5A; VCE= 2V 25 hFE-2 DC Current Gain IC= 5A; VCE= 2V 7 Current-Gain—Bandwidth Product IC= 1A; VCE= 10V; ftest= 1.0MHz 4 fT isc Website：www.iscsemi.cn CONDITIONS 2 MIN MAX 40 UNIT V 100 MHz