isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055H DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 115 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 1.52 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055H ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; IB=0 100 V VCER(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; RBE=100Ω 70 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A 3.0 V VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V 1.5 V ICEO Collector Cutoff Current VCE= 30V; IB=0 0.7 mA ICEX Collector Cutoff Current VCE= 100V; VBE(off)= 1.5V VCE= 100V; VBE(off)= 1.5V,TC=150℃ 1.0 5.0 mA IEBO Emitter Cutoff Current VEB= 7.0V; IC=0 5.0 mA hFE-1 DC Current Gain IC= 4A ; VCE= 4V 20 hFE-2 DC Current Gain IC= 10A ; VCE= 4V 5.0 Second Breakdown Collector Current with Base Forward Biased VCE= 40V,t= 1.0s,Nonrepetitive 2.87 A Current Gain-Bandwidth Product IC= 0.5A ; VCE= 10V;f=1.0MHz 2.5 MHz Is/b fT CONDITIONS isc Website：www.iscsemi.cn 2 MIN MAX UNIT 70