ISC 2N5676

Inchange Semiconductor
Product Specification
2N5676
Silicon PNP Power Transistors
DESCRIPTION
・With TO-66 package
・High transition frequency
APPLICATIONS
・For use as high-frequency drivers
in audio amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-125
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-5
V
-2
A
2
W
IC
Collector current
PD
Total Power Dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
2.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N5676
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-0.1A ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-1A; IB=-0.1A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-1A ;IB=-0.1A
-1.2
V
VBE
Base-emitter on voltage
IC=-1A ; VCE=-5V
-1.2
V
ICEO
Collector cut-off current
VCE=-50V; IB=0
-0.5
mA
ICBO
Collector cut-off current
VCB=-125V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-0.1A ; VCE=-5V
50
hFE-2
DC current gain
IC=-0.5A ; VCE=-5V
50
Transition frequency
IC=-100mA;VCE=10V
50
fT
CONDITIONS
2
MIN
TYP.
MAX
-100
UNIT
V
150
MHz
Inchange Semiconductor
Product Specification
2N5676
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3