Inchange Semiconductor Product Specification BD708 BD710 BD712 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BD707/709/711 APPLICATIONS ・Intented for use in power linear and switching applications. PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) 导体 半 电 SYMBOL PARAMETER 固 VCBO VCEO VEBO Collector-base voltage VALUE BD710 -60 D N O IC Open emitter BD712 BD708 BD710 Open base BD712 Emitter-base voltage UNIT R O T UC BD708 M E S GE N A H INC Collector-emitter voltage CONDITIONS Open collector -80 V -100 -60 -80 V -100 -5 V IC Collector current-DC -12 A ICM Collector current-Pulse -18 A IB Base current -5 A PT Total dissipation 75 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.67 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BD708 BD710 BD712 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD708 VCEO(SUS) Collector-emitter sustaining voltage BD710 VBE ICBO IC=-0.1A, IB=0 -100 IC=-4A ,IB=-0.4A -1.0 V Base-emitter voltage IC=-4A , VCE=-4V -1.5 V BD708 VCB=-60V, IE=0 TC=150℃ -0.1 -1.0 BD710 VCB=-80V, IE=0 TC=150℃ -0.1 -1.0 BD712 VCB=-100V, IE=0 TC=150℃ -0.1 -1.0 BD708 VCE=-30V, IB=0 BD710 VCE=-40V, IB=0 BD712 N A H INC VCE=-50V, IB=0 Collector cut-off current 固 Collector cut-off current R O T UC D N O IC M E S GE Emitter cut-off current hFE-1 DC current gain IC=-0.5A ; VCE=-2V 40 hFE-2 DC current gain only for BD708 IC=-2A ; VCE=-2V 30 hFE-3 DC current gain IC=-4A ; VCE=-4V 15 VEB=-5V; IC=0 BD708 DC current gain BD710 5 IC=-10A ; VCE=-4V Transition frequency 120 mA -0.1 mA -1.0 mA 400 150 10 8 BD712 fT UNIT V -80 IEBO hFE-4 MAX Collector-emitter saturation voltage 导体 半 电 ICEO TYP. -60 BD712 VCEsat MIN 8 IC=-0.3A;VCE=-3V; 2 3 MHz Inchange Semiconductor Product Specification BD708 BD710 BD712 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC M E S GE N A H INC R O T UC Fig.2 Outline dimensions 3