ISC BD708

Inchange Semiconductor
Product Specification
BD708 BD710 BD712
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220C package
・Complement to type BD707/709/711
APPLICATIONS
・Intented for use in power linear
and switching applications.
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
导体
半
电
SYMBOL
PARAMETER
固
VCBO
VCEO
VEBO
Collector-base voltage
VALUE
BD710
-60
D
N
O
IC
Open emitter
BD712
BD708
BD710
Open base
BD712
Emitter-base voltage
UNIT
R
O
T
UC
BD708
M
E
S
GE
N
A
H
INC
Collector-emitter voltage
CONDITIONS
Open collector
-80
V
-100
-60
-80
V
-100
-5
V
IC
Collector current-DC
-12
A
ICM
Collector current-Pulse
-18
A
IB
Base current
-5
A
PT
Total dissipation
75
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
1.67
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
BD708 BD710 BD712
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD708
VCEO(SUS)
Collector-emitter
sustaining voltage
BD710
VBE
ICBO
IC=-0.1A, IB=0
-100
IC=-4A ,IB=-0.4A
-1.0
V
Base-emitter voltage
IC=-4A , VCE=-4V
-1.5
V
BD708
VCB=-60V, IE=0
TC=150℃
-0.1
-1.0
BD710
VCB=-80V, IE=0
TC=150℃
-0.1
-1.0
BD712
VCB=-100V, IE=0
TC=150℃
-0.1
-1.0
BD708
VCE=-30V, IB=0
BD710
VCE=-40V, IB=0
BD712
N
A
H
INC
VCE=-50V, IB=0
Collector cut-off current
固
Collector cut-off current
R
O
T
UC
D
N
O
IC
M
E
S
GE
Emitter cut-off current
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
40
hFE-2
DC current gain only for BD708
IC=-2A ; VCE=-2V
30
hFE-3
DC current gain
IC=-4A ; VCE=-4V
15
VEB=-5V; IC=0
BD708
DC current gain
BD710
5
IC=-10A ; VCE=-4V
Transition frequency
120
mA
-0.1
mA
-1.0
mA
400
150
10
8
BD712
fT
UNIT
V
-80
IEBO
hFE-4
MAX
Collector-emitter saturation voltage
导体
半
电
ICEO
TYP.
-60
BD712
VCEsat
MIN
8
IC=-0.3A;VCE=-3V;
2
3
MHz
Inchange Semiconductor
Product Specification
BD708 BD710 BD712
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
M
E
S
GE
N
A
H
INC
R
O
T
UC
Fig.2 Outline dimensions
3