Inchange Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 3 A ICM Collector current-Peak 8 A IB Base current 1 A PC Collector dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ MAX UNIT 4.16 ℃/W B TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case Inchange Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX Collector-emitter voltage IC=10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V VBE Base-emitter on voltage IC=1A ; VCE=2V 1.5 V ICBO Collector cut-off current VCB=60V; IE=0 0.1 mA ICEO Collector cut-off current VCE=60V; IB=0 5 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE-1 DC current gain IC=1A ; VCE=2V 40 hFE-2 DC current gain IC=0.1A ; VCE=2V 40 Transition frequency IC=0.5A ; VCE=5V 5 hFE-1Classifications C D E F 40-80 60-120 100-200 160-320 2 60 UNIT VCEO fT PARAMETER V 320 MHz Inchange Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3