ISC 2SD313

Inchange Semiconductor
Product Specification
2SD313
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·Complement to type 2SB507
·Low collector saturation voltage
APPLICATIONS
·Designed for the output stage of 15W
to 25W AF power amplifier
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
3
A
ICM
Collector current-Peak
8
A
IB
Base current
1
A
PC
Collector dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
MAX
UNIT
4.16
℃/W
B
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rθjc
CHARACTERISTICS
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2SD313
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
CONDITIONS
MIN
TYP.
MAX
Collector-emitter voltage
IC=10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.2A
1.0
V
VBE
Base-emitter on voltage
IC=1A ; VCE=2V
1.5
V
ICBO
Collector cut-off current
VCB=60V; IE=0
0.1
mA
ICEO
Collector cut-off current
VCE=60V; IB=0
5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
hFE-1
DC current gain
IC=1A ; VCE=2V
40
hFE-2
DC current gain
IC=0.1A ; VCE=2V
40
Transition frequency
IC=0.5A ; VCE=5V
5
hFE-1Classifications
C
D
E
F
40-80
60-120
100-200
160-320
2
60
UNIT
VCEO
fT
‹
PARAMETER
V
320
MHz
Inchange Semiconductor
Product Specification
2SD313
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3