isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA940 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073 APPLICATIONS ·Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A PC Total Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA940 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0 -150 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.5 V VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V -0.85 V ICBO Collector Cutoff Current VCB= -120V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE DC Current Gain IC= -0.5A ; VCE= -10V 40 Current-Gain—Bandwidth Product IC= -0.5A;VCE= -10V;ftest= 1MHz 4 fT isc Website：www.iscsemi.cn CONDITIONS MIN B 2 TYP. MAX UNIT 140 MHz