isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY78 DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation: PC= 25W @TC= 25℃ APPLICATIONS ·Designed for general purpose switching and amplifier applications. VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VBE= -1.5V 90 VCEO Collector-Emitter Voltage 55 n c . i m e VEBO Emitter-Base Voltage 7 V ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT s c s i . w w w 90 V V V IC Collector Current-Continuous 4 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 7.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY78 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 55 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 90 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 1A 3.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 4V 2.0 V ICEX Collector Cutoff Current VCE= 90V; VBE= -1.5V VCE= 90V; VBE= -1.5V, TC=150℃ 1.0 5.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain fT CONDITIONS B w isc Website：www.iscsemi.cn n c . i m e s c s .i ww Current Gain-Bandwidth Product MIN IC= 0.5A; VCE= 4V 25 IC= 3A; VCE= 4V 5 IC= 0.2A; VCE= 10V 8 2 MAX UNIT 100 MHz