isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6738 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters, DC-DC and converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage-VBE= -1.5V 450 V VCEX Collector-Emitter Voltage-VBE= -1.5V 350 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 4 A PC Collector Power Dissipation TC=25℃ 100 W Tj Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.25 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6738 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 4A 2 V Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.6 V ICEV Collector Cutoff Current VCEV= 450V;VBE(off)=-1.5V VCEV= 450V;VBE(off)=-1.5V;TJ= 100℃ 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 2 mA hFE DC Current Gain IC= 5A ; VCE= 3V 10 40 Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V, ftest= 1MHz 10 60 MHz 0.1 μs 0.4 μs 2.5 μs 0.5 μs VBE(sat) fT CONDITIONS MIN MAX 300 UNIT V Switching Times; Resistive Load td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 5A; IB1= -IB2= 1A,VCC= 125V; tp= 20μs, Duty Cycle≤1%