isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJF13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7μs(Max.)@ IC= 8.0A APPLICATIONS ·Designed for use in high-voltage, high-speed, power switching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 12 A ICM Collector Current-peak 24 A IB Base Current 6 A IBM Base Current-Peak 12 A PC Collector Power Dissipation TC=25℃ 50 W Ti Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJF13009 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A 1.5 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12A ;IB= 3A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A ;IB= 1A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 8A ;IB= 1.6A 1.6 V ICEV Collector Cutoff Current VCEV= 700V; VBE(off)= 1.5V TC= 100℃ 1 5 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 1 mA hFE-1 DC Current Gain IC= 5A; VCE= 5V 8 40 hFE-2 DC Current Gain IC= 8A; VCE= 5V 6 30 Current-Gain—Bandwidth Product IC= 0.5 A; VCE= 10V; 4 Output Capacitance IE= 0; VCB= 10V; ftest = 0.1MHz fT COB CONDITIONS MIN TYP. MAX 400 UNIT V MHz 180 pF Switching Times; Resistive Load ton Storage Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 8A; VCC= 125V; IB1= IB2= 1.6A; tp= 25μs; Duty Cycle≤ 1% 1.1 μs 3.0 μs 0.7 μs