isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJH16008 DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 6 A IBM Base Current-Peak 12 A PC Collector Power Dissipation @TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ VEBO B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJH16008 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A IC= 5A; IB= 0.5A,TC=100℃ 3.0 3.0 V IC= 5A; IB= 0.5A IC= 5A; IB= 0.5A,TC=100℃ 1.5 1.5 V 450 Base-Emitter Saturation Voltage UNIT V B B B VBE(sat) MAX B B ICEV Collector Cutoff Current VCEV=850V;VBE(off)=1.5V VCEV=850V;VBE(off)=1.5V;TC=100℃ 0.25 1.5 mA ICER Collector Cutoff Current VCE= 850V; RBE= 50Ω,TC= 100℃ 2.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 1.0 mA hFE DC Current Gain IC= 8A ; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0kHz 350 pF 20 50 ns 100 250 ns 900 2200 ns 70 250 ns 7 Switching times;Resistive Load td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 5A , VCC= 250V; RB2= 4Ω; IB1= 0.5A; IB2= -1A;PW= 30μs; Duty Cycle≤2.0% 2