Inchange Semiconductor Product Specification TIP30/30A/30B/30C Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type TIP29/29A/29B/29C APPLICATIONS ・For use in general purpose power amplifer and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS TIP30 Collector-base voltage -60 Open emitter -80 TIP30C -100 TIP30 -40 Collector-emitter voltage VEBO Emitter-base voltage IC V TIP30B TIP30A VCEO UNIT -40 TIP30A VCBO VALUE -60 Open base V TIP30B -80 TIP30C -100 Open collector -5 V Collector current (DC) -1 A ICM Collector current-Pulse -3 A IB Base current -0.4 A PC Collector power dissipation 30 w Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification TIP30/30A/30B/30C Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP30 VCEO(SUS) VCEsat VBE ICES ICEO Collector-emitter sustaining voltage MIN MAX UNIT -40 TIP30A -60 IC=-30mA; IB=0 V TIP30B -80 TIP30C -100 Collector-emitter saturation voltage IC=-1A ;IB=-0.125A -0.7 V Base-emitter on voltage IC=-1A ; VCE=-4V -1.3 V -0.2 mA -0.3 mA -1.0 mA Collector cut-off current Collector cut-off current TIP30 VCE=-40V; VEB=0 TIP30A VCE=-60V; VEB=0 TIP30B VCE=-80V; VEB=0 TIP30C VCE=-100V; VEB=0 TIP30/30A VCE=-30V; IB=0 TIP30B/30C VCE=-60V; IB=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-0.2A ; VCE=-4V 40 hFE-2 DC current gain IC=-1A ; VCE=-4V 15 Transiton frequency IC=-0.2A ; VCE=-10V;f=1MHz 3 fT TYP. 75 MHz THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 VALUE UNIT 4.167 ℃/W Inchange Semiconductor Product Specification TIP30/30A/30B/30C Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3