Inchange Semiconductor Product Specification TIP33/33A/33B/33C Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type TIP34/34A/34B/34C ・DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS ・Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO PARAMETER CONDITIONS TIP33 TIP33A TIP33B VCEO VEBO EMIC S E G AN Collector-base voltage INCH Collector-emitter voltage TIP33C Open emitter TIP33 TIP33A OND Open base VALUE 40 60 100 40 60 80 TIP33C 100 Open collector V 80 TIP33B Emitter-base voltage UNIT V 5 V IC Collector current 10 A ICM Collector current-peak 15 A IB Base current 3 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.56 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification TIP33/33A/33B/33C Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP33 Collector-emitter sustaining voltage VCEO MIN TYP. MAX UNIT 40 TIP33A 60 IC=30mA ;IB=0 V TIP33B 80 TIP33C 100 VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=0.3A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=2.5A 4.0 V VBE-1 Base-emitter on voltage IC=3A ; VCE=4V 1.6 V VBE-2 Base-emitter on voltage IC=10A ; VCE=4V 3.0 V ICEO Collector cut-off current 0.7 mA TIP33/33A 体 半导 ICES 固电 Collector cut-off current VCE=30V; IB=0 TIP33B/33C VCE=60V; IB=0 TIP33 VCE=40V;VEB=0 TIP33A VCE=60V;VEB=0 R O T UC D N O IC M E S GE TIP33B VCE=80V;VEB=0 hFE-1 N A H INC VCE=100V;VEB=0 DC current gain IC=1A ; VCE=4V 40 hFE-2 DC current gain IC=3A ; VCE=4V 20 Transition frequency IC=0.5A ; VCE=10V;f=1MHz 3.0 TIP33C IEBO Emitter cut-off current fT VEB=5V; IC=0 2 0.4 mA 1.0 mA 100 MHz Inchange Semiconductor Product Specification TIP33/33A/33B/33C Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3