Inchange Semiconductor Product Specification TIP35/35A/35B/35C Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type TIP36/36A/36B/36C ・DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS ・Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 半导 Absolute maximum ratings(Ta=℃) SYMBOL 固电 VCBO PARAMETER TIP35 D N O IC TIP35A Collector-base voltage Open emitter M E S GE TIP35B VCEO VEBO N A H C IN R O T UC CONDITIONS TIP35C TIP35 TIP35A Collector-emitter voltage VALUE 40 60 V 80 100 40 60 Open base V TIP35B 80 TIP35C 100 Emitter-base voltage UNIT Open collector 5 V IC Collector current 25 A ICM Collector current-peak 40 A IB Base current 5 A PC Collector power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification TIP35/35A/35B/35C Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP35 V(SUS)CEO Collector-emitter sustaining voltage MIN TYP. MAX UNIT 40 TIP35A 60 IC=30mA ;IB=0 V TIP35B 80 TIP35C 100 VCEsat-1 Collector-emitter saturation voltage IC=15A ;IB=1.5A 1.8 V VCEsat-2 Collector-emitter saturation voltage IC=25A; IB=5A 4.0 V VBE-1 Base-emitter on voltage IC=15A ; VCE=4V 2.0 V VBE-2 Base-emitter on voltage IC=25A ; VCE=4V 4.0 V ICEO Collector cut-off current 1.0 mA 0.7 mA 1.0 mA VCE=30V; IB=0 TIP35B/35C VCE=60V; IB=0 TIP35 VCE=40V;VEB=0 导体 半 电 固 ICES TIP35/35A Collector cut-off current R O T UC D N O IC M E S GE TIP35A N A H INC VCE=60V;VEB=0 TIP35B VCE=80V;VEB=0 TIP35C VCE=100V;VEB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1.5A ; VCE=4V 25 hFE-2 DC current gain IC=15A ; VCE=4V 15 Transition frequency IC=1A ; VCE=10V 3 fT 2 75 MHz Inchange Semiconductor Product Specification TIP35/35A/35B/35C Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification TIP35/35A/35B/35C Silicon NPN Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4