isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD545/A/B/C DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C ·Complement to Type BD546/A/B/C APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BD545 40 BD545A 60 Collector-Base Voltage V 80 BD545C 100 BD545 40 BD545A 60 BD545B 80 BD545C 100 V Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A PC Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Tstg n c . i m e s c s i . w BD545B w w Collector-Emitter Voltage UNIT 3.5 W 85 150 ℃ -65~150 ℃ Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD545/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD545 V(BR)CEO Collector-Emitter Breakdown Voltage MIN TYP. MAX UNIT 40 BD545A 60 IC= 30mA ;IB=0 V B BD545B 80 BD545C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.625A 0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 1.0 V Base-Emitter On Voltage IC= 10A; VCE= 4V 1.8 V 0.4 mA 0.7 mA 1.0 mA VBE(on) BD545 B ICES ICEO ww w Collector Cutoff Current s c s .i BD545A Collector Cutoff Current BD545B BD545C BD545/A BD545B/C n c . i m e VCE= 40V; VBE= 0 VCE= 60V; VBE= 0 VCE= 80V; VBE= 0 VCE= 100V; VBE= 0 VCE= 30V; IB= 0 B VCE= 60V; IB= 0 B IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 4V 60 hFE-2 DC Current Gain IC= 5A; VCE= 4V 25 hFE-3 DC Current Gain IC= 10A; VCE= 4V 10 Switching times ton Turn-on Time toff Turn-off Time isc Website：www.iscsemi.cn IC= 6A; IB1= -IB2= 0.6A; RL= 5Ω; VBE(off)= -4V 2 0.6 μs 1.0 μs