isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD950F/952F/954F/956F DESCRIPTION ·DC Current Gain: hFE= 40(Min)@ IC= -500mA ·Complement to Type BD949F/951F/953F/955F APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BD950F -60 BD952F -80 BD954F -100 BD956F -120 BD950F -60 BD952F -80 BD954F -100 BD956F -120 Collector-Base Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A PC Collector Power Dissipation @ TC=25℃ 22 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 8.12 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD950F/952F/954F/956F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN BD950F -60 BD952F -80 TYP. MAX IC= -100mA ; IB= 0 UNIT V BD954F -100 BD956F -120 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.0 V VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -4V -1.4 V ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 1 VCB= /2VCBOmax; IE= 0,TJ=150℃ -0.05 -1 mA ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.2 mA hFE-1 DC Current Gain IC= -500mA ; VCE= -4V hFE-2 DC Current Gain IC= -2A ; VCE= -4V Current-Gain—Bandwidth Product IC= -500mA ; VCE= -4V fT B 40 20 3 MHz Switching Times ton Turn-On Time 0.3 μs 1.5 μs IC= -1.0A; IB1= -IB2= -0.1A toff Turn-Off Time isc Website：www.iscsemi.cn 2