IXFF 24N100 HiPerFETTM Power MOSFET in High Voltage ISOPLUS i4-PACTM ID25 = 22 A VDSS = 1000 V Ω RDSon = 390 mΩ 5 1 1 5 2 Features Maximum Ratings VDSS TVJ = 25°C to 150°C 1000 V VGS TC = 25°C TC = 90°C IF25 IF90 (diode) TC = 25°C (diode) TC = 90°C dv/dt VDS < VDSS; IF ≤ 100A;⎮diF/dt⎮≤ 100A/µs; RG = 2 Ω TVJ = 150°C EAR TC = 25°C Symbol Conditions V 22 15 A A 120 75 A A -o ID25 ID90 ±20 e 5 V/ns s 64 mJ h a Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = ID90 VGSth VDS = 20 V; ID = 8 mA; IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C 390 mΩ 2.5 p RDSon IGSS VGS = ±20 V; VDS = 0 V Qg Qgs Qgd VGS= 10 V; VDS = 500 V; ID = 12 A td(on) tr td(off) tf VGS= 10 V; VDS = 500 V; ID = 12 A; RG = 1 Ω VF (diode) IF = 12 A; VGS = 0 V trr (diode) IF = 24 A; -di/dt = 100 A/µs; VDS = 100 V RthJC IXYS reserves the right to change limits, test conditions, and dimensions. © 2006 IXYS All rights reserved 5 V 0.1 mA mA 200 nA 0.25 250 55 135 nC nC nC 35 35 75 21 ns ns ns ns 1.5 250 Applications • switched mode power supplies • DC-DC converters • resonant converters V ns 0.32 K/W 0623 Conditions u Symbol • HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode • ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline t MOSFET 1-4 IXFF 24N100 Component Symbol Dimensions in mm (1 mm = 0.0394") Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions dS,dA dS,dA D pin - S pin pin - backside metal RthCH with heatsink compound -55...+150 -55...+125 °C °C 2500 V~ 20...120 N Characteristic Values min. typ. max. 7.0 5.5 mm mm 0.15 K/W 9 g IXYS reserves the right to change limits, test conditions, and dimensions. © 2006 IXYS All rights reserved 0623 p h a s e -o u t Weight 2-4 IXFF 24N100 24 55 10 V 7V 10 V 7V 50 20 45 35 ID [A] 6V 12 30 25 20 8 6V 15 10 4 5 VGS = 5 V 0 1 2 3 4 5 6 VDS [V] 7 8 9 0 3 6 9 12 18 21 24 27 30 VDS [V] Fig. 1. Output Characteristics@25°C Fig. 2. Extended Output Characteristics @ 25°C 24 2.6 2.4 6V 20 u VGS = 10 V 2.0 1.8 -o 16 RDS(on) [Normalized] 2.2 12 e 8 5V s 4 0 2 4 6 8 10 12 14 16 a 0 18 ID = 24 A 1.6 1.4 ID = 12 A 1.2 1.0 0.8 0.6 0.4 -50 20 -25 0 25 VDS [V] h 2.4 TVJ = 125°C 2.2 2.0 1.8 ID [A] VGS = 10 V 1.6 1.4 1.2 TVJ = 25°C 1.0 0.8 0 5 10 15 20 25 30 35 40 45 50 55 ID [A] Fig. 5. RDS(on) Normalized to ID = 12 A Value versus Drain Current IXYS reserves the right to change limits, test conditions, and dimensions. © 2006 IXYS All rights reserved 75 100 125 150 Fig. 4. RDS(on) Normalized to ID = 12 A Value versus Junction Temperature p 2.6 50 TJ [°C] Fig. 3. Output Characteristics @ 125°C RDS(on) [Normalized] 15 t 0 ID [A] VGS = 5 V 0 24 22 20 18 16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 TC [°C] 100 125 150 175 Fig. 6. Max. Drain Current vs. Case Temperature 0623 ID [A] 40 16 3-4 IXFF 24N100 60 45 40 TJ = 25°C TJ = -40°C 50 TJ = 25°C 35 TJ = 125°C 40 Gfs [S] ID [A] 30 25 20 TJ = 125°C 30 20 15 TJ = -40°C 10 10 5 0 3.5 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 40 50 Fig. 8. Transconductance t Fig. 7. Input Admittance 10 70 VDS = 500 V ID = 12 A IG = 10 mA 9 u 60 8 50 -o 7 40 VGS [V] TJ = 125°C 30 20 TJ = 25°C 0.4 0.5 0.6 0.7 0.8 0.9 1.0 a 0 0.3 s 10 e 1.1 6 5 4 3 2 1 0 1.2 0 30 60 90 QG [nC] VSD [V] Fig. 10. Gate Charge h Fig. 9. Forward Voltage Drop of Intrinsic Diode 0.35 p 100000 0.30 C [pf] RthJC [°K/W] Ciss 10000 Coss 1000 120 150 180 210 240 270 0.25 0.20 0.15 0.10 0.05 Crss 100 0 5 10 15 20 25 30 35 40 VDS [V] Fig. 11. Capacitance IXYS reserves the right to change limits, test conditions, and dimensions. © 2006 IXYS All rights reserved 0.00 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width [s] Fig. 12. Max. Transient Thermal Resistance 0623 IS [A] 30 ID [A] VGS [V] 4-4