HiPerFETTM Power MOSFETs IXFB 72N55Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS(on)= 72 mΩ ≤ 250 ns trr Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 550 550 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 72 284 72 A A A EAR EAS TC = 25°C TC = 25°C 60 5.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 20 V/ns PD TC = 25°C 890 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C TL 1.6 mm (0.063 in.) from case for 10 s Fc Mounting Force G D G = Gate S = Source D = Drain TAB = Drain Features z z z z Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications 30...120/7.5...27 N/lb z Weight 10 g z z z Symbol Test Conditions VDSS VGS = 0 V, ID = 1mA 550 V VGS(th) VDS = VGS, ID = 8mA 2.5 5.0 V IGSS VGS = ±30 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 © 2003 IXYS All rights reserved (TAB) S Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. z Advantages z ±200 nA TJ = 25°C TJ = 125°C DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers z z PLUS 264TM package for clip or spring mounting Space savings High power density 100 µA 5 mA 72 mΩ DS98999C(10/03) IXFB 72N55Q2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 Ciss Coss 40 57 S 10500 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 1500 pF 230 pF td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 30 23 ns ns td(off) RG = 1 Ω (External) 58 ns 10 ns 258 nC 65 nC 123 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.14 RthCK 0.13 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 IRM K/W Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. trr QRM K/W PLUS 264TM Outline IF = 25A -di/dt = 100 A/µs VR = 100 V 72 A 288 A 1.5 V 250 ns 1.2 µC 8 A Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFB 72N55Q2 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 180 72 VGS = 10V 8V 7V 63 140 I D - Amperes 54 I D - Amperes VGS = 10V 8V 160 45 6V 36 27 18 120 7V 100 80 60 6V 40 5V 9 20 5V 0 0 0 1 2 3 4 5 0 6 2 4 6 Fig. 3. Output Characteristics @ 125 Deg. C 72 2.6 14 16 18 20 VGS = 10V 2.4 R D S (on) - Normalized I D - Amperes 12 2.8 54 6V 45 36 27 18 5V 2.2 2 1.8 I D = 72A 1.6 I D = 36A 1.4 1.2 1 0.8 9 0.6 0 0.4 0 2 4 6 8 10 12 -50 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID Fig. 6. Drain Current vs. Case Tem perature 2.8 80 VGS = 10V 2.6 70 2.4 TJ = 125ºC 60 2.2 I D - Amperes R D S (on) - Normalized 10 Fig. 4. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature VGS = 10V 8V 7V 63 8 V D S - Volts V D S - Volts 2 1.8 1.6 1.4 TJ = 25ºC 50 40 30 20 1.2 10 1 0.8 0 0 20 40 60 80 100 120 I D - Amperes © 2003 IXYS All rights reserved 140 160 180 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFB 72N55Q2 Fig. 8. Transconductance 100 110 90 100 80 90 TJ = -40ºC 25ºC 125ºC 80 70 g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance 60 50 40 30 70 60 50 40 30 TJ = 125ºC 25ºC -40ºC 20 10 20 10 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 20 40 60 V G S - Volts 100 120 140 160 Fig. 10. Gate Charge 200 10 180 9 160 8 140 7 VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 120 100 80 60 VDS = 275V I D = 36A I G = 10mA 6 5 4 3 40 2 TJ = 125ºC 20 1 TJ = 25ºC 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 40 80 120 160 200 240 280 Q G - nanoCoulombs V S D - Volts Fig. 12. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 0.16 100000 f = 1MHz 0.14 C iss 0.12 R (th) J C - (ºC/W) Capacitance - pF 80 I D - Amperes 10000 C oss 1000 0.1 0.08 0.06 0.04 C rss 0.02 0 100 0 5 10 15 20 25 V D S - Volts 30 35 40 1 10 100 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 1000