IXFK64N50P IXFX64N50P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode = = ≤ ≤ 500V 64A Ω 85mΩ 200ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA 64 A 150 A TC = 25°C 64 A EAS TC = 25°C 2.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 830 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 20..120/4.5..27 1.13/10 N/lb. Nm/lb.in. 6 10 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Force Mounting Torque Weight PLUS247 TO-264 (PLUS247) (TO-264) G D (TAB) S PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features • • • • • International Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z z z Easy to Mount Space Savings High Power Density Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V 5.5 V ±200 nA TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 25 μA 1 mA • DC-DC Coverters • Battery Chargers • Switched-Mode and Resonant-Mode Power Supplies • DC Choppers • AC and DC Motor Drives • Uninterrupted Power Supplies • High Speed Power Switching Applications 85 mΩ DS99348F(5/09) IXFK64N50P IXFX64N50P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 50 S 9700 nF 970 pF 30 pF 30 ns 25 ns 85 ns 22 ns 150 nC 50 nC 50 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) Qg(on) Qgs TO-264 (IXFK) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.15 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 64 A Repetitive, Pulse Width Limited by TJM 250 A VSD IF = 64A, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 25A, -di/dt = 100A/μs 0.6 6.0 VR = 100V, VGS = 0V PLUS 247TM (IXFX) Outline 200 nS μC A Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK64N50P IXFX64N50P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 160 70 VGS = 10V 8V 60 VGS = 10V 8V 140 7V 120 ID - Amperes ID - Amperes 50 6V 40 30 100 7V 80 60 6V 20 40 5V 10 20 5V 0 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 7.0 5 10 20 25 30 Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 3.2 70 VGS = 10V 8V 7V 3.0 VGS = 10V 2.8 2.6 RDS(on) - Normalized 60 50 ID - Amperes 15 VDS - Volts VDS - Volts 6V 40 30 20 2.4 I D = 64A 2.2 2.0 I D = 32A 1.8 1.6 1.4 1.2 5V 1.0 10 0.8 0.6 0 0.4 0 2 4 6 8 10 12 14 -50 16 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 70 3.4 3.2 VGS = 10V 60 TJ = 125ºC 3.0 50 2.6 ID - Amperes RDS(on) - Normalized 2.8 2.4 2.2 2.0 1.8 1.6 40 30 20 1.4 TJ = 25ºC 1.2 10 1.0 0.8 0 0 20 40 60 80 100 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 120 140 160 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFK64N50P IXFX64N50P Fig. 8. Transconductance 90 80 80 70 70 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 90 60 50 TJ = 125ºC 25ºC - 40ºC 40 TJ = - 40ºC 25ºC 60 50 125ºC 40 30 30 20 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 Fig. 10. Gate Charge 240 10 220 9 200 VDS = 250V I D = 32A 8 I G = 10mA 180 7 160 VGS - Volts IS - Amperes 80 ID - Amperes 140 120 100 80 5 4 3 TJ = 125ºC 60 6 2 40 TJ = 25ºC 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 VSD - Volts 20 40 60 80 100 120 140 160 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 0.100 Coss 100 Crss 0.010 10 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1000 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_64N50P(9J)4-27-09