IXFN230N10 Power MOSFET Single Die MOSFET VDSS = 100V ID25 = 230A RDS(on) ≤ 6.0mΩ Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr miniBLOC, SOT-227 B E153432 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C, Chip capability 230 A IL(RMS) External lead current limit 200 A IDM TC = 25°C, pulse width limited by TJM 920 A IA TC = 25°C 100 A EAS TC = 25°C 4 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns Pd TC = 25°C 700 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ VISOL 50/60 Hz, RMS IISOL ≤ 1mA t = 1min t = 1s Md Mounting torque Terminal connection torque Weight S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Guaranteed FBSOA • Low package inductance • Fast intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 100 VGS(th) VDS = VGS, ID = 8mA 2.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS Corporation, All rights reserved • • • TJ = 125°C V 4.0 V ±200 nA 100 2 μA mA 6.0 mΩ Easy to mount Space savings High power density Applications • • • • • DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls DS98548F(12/08) IXFN230N10 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 10V, ID = 60A, Note 1 60 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Qg(on) Qgs Qgd Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 97 S 19 5600 2750 nF pF pF 40 ns 150 112 60 ns ns ns 570 70 290 nC nC nC RthJC RthCS miniBLOC, SOT-227 B 1.240 0.307 1.255 0.323 0.18 °C/W C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 °C/W E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values Min. Typ. Max. VGS = 0V 230 A ISM Repetitive, pulse width limited by TJM 920 A VSD IF = 100A, VGS = 0V, Note 1 1.2 V 250 ns μC A IF = 50A, -di/dt = 100A/μs, VR = 50V 1.2 9.0 Inches Min. Max. 31.88 8.20 IS QRM IRM Millimeter Min. Max. 31.50 7.80 Source-Drain Diode trr Dim. A B 0.05 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) M4 screws (4x) supplied Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN230N10 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 240 350 VGS = 10V 9V 8V 7V 200 VGS = 10V 9V 8V 7V 300 ID - Amperes ID - Amperes 250 160 6V 120 80 5V 200 6V 150 100 40 5V 50 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.5 1.0 1.5 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 4. RDS(on) Normalized to ID = 115A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 240 2.2 VGS = 10V 9V 8V 7V VGS = 10V 2.0 RDS(on) - Normalized 200 ID - Amperes 2.0 VDS - Volts VDS - Volts 160 6V 120 5V 80 1.8 I D = 230A 1.6 I D = 115A 1.4 1.2 1.0 40 0.8 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 115A Value vs.Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 220 2.0 200 VGS = 10V External Lead Current Limit 1.8 180 160 TJ = 125ºC 1.6 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.4 1.2 140 120 100 80 60 40 1.0 TJ = 25ºC 20 0.8 0 0 50 100 150 200 ID - Amperes © 2008 IXYS Corporation, All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade IXYS REF: F_230N10(9Y-N17)12-02-08-D IXFN230N10 Fig. 7. Input Admittance Fig. 8. Transconductance 200 180 180 160 TJ = - 40ºC 160 140 25ºC g f s - Siemens ID - Amperes 140 120 100 TJ = 125ºC 25ºC - 40ºC 80 120 125ºC 100 80 60 60 40 40 20 20 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 6.0 20 40 60 VGS - Volts 100 120 140 160 180 200 Fig. 10. Gate Charge 300 10 270 9 240 8 210 7 VDS = 50V I D = 100A VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 180 150 120 TJ = 125ºC 90 I G = 10mA 6 5 4 3 TJ = 25ºC 60 2 30 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 50 100 150 VSD - Volts 200 250 300 350 400 450 500 550 600 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100 1.000 f = 1 MHz Ciss Z(th)JC - ºC / W Capacitance - NanoFarads 80 ID - Amperes 10 Coss 0.100 0.010 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXFN230N10 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 1,000 1,000 RDS(on) Limit 25µs RDS(on) Limit 100µs 100µs ID - Amperes External-Lead Limit 10ms 100 1ms ID - Amperes 1ms 100 10ms 100ms 10 10 100ms DC TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse 1 DC 1 1 10 VDS - Volts © 2008 IXYS Corporation, All rights reserved 100 1 10 100 VDS - Volts IXYS REF: F_230N10(9Y-N17)12-02-08-D