HiPerFETTM Power MOSFET Q2-Class IXFN66N50Q2 VDSS = 500V ID25 = 66A Ω RDS(on) ≤ 80mΩ ≤ 250ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 500 500 V V VGSS VGSM Continuous Transient ±30 ±40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 66 264 A A IA TC = 25°C 66 A EAS TC = 25°C 4 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 735 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 3000 V~ V~ 1.5/13 1.3/ 11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60Hz, RMS IISOL ≤ 1mA Md Mounting torque Terminal connection torque t = 1min t = 1s Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V 5.5 V ±200 nA TJ = 125°C 50 3 μA mA VGS = 10V, ID = 0.5 • ID25, Note 1 80 mΩ © 2008 IXYS Corporation, All rights reserved S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features z Double metal process for low gate resistance z miniBLOC, with Aluminium nitride isolation z Unclamped Inductive Switching (UIS) rated z Low package inductance z Fast intrinsic Rectifier Applications DC-DC converters z Switched-mode and resonant-mode power supplies z DC choppers z Pulse generators z Advantages z Easy to mount z Space savings z High power density DS99077B(05/08) IXFN66N50Q2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 30 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 44 S 9125 pF 1200 pF 318 pF 32 ns 16 ns 60 ns 10 ns Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs SOT-227B Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 200 nC 47 nC 98 nC 0.17 °C/W RthJC RthCS °C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 66 A Repetitive, pulse width limited by TJM 264 A IF = IS, VGS = 0V, Note 1 1.5 V 250 ns IF = 25A, -di/dt = 100A/μs 1 10 VR= 100V, VGS = 0V μC A Notes1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN66N50Q2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25° C @ 25° C 70 160 VGS = 10V VGS = 10V 140 8V 7V 6V I D - Amperes 50 40 5.5V 30 20 5V 10 8V 120 I D - Amperes 60 4.5V 0 100 7V 80 60 40 6V 20 5V 0 0 1 2 3 4 5 6 7 0 2 4 6 V D S - Volts 12 14 16 18 20 Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature @ 125° C 70 3.0 VGS = 10V 60 2.8 VGS = 10V 2.6 R D S ( o n ) - Normalized 7V 6V 50 I D - Amperes 10 V D S - Volts Fig. 3. Output Characteristics 40 5V 30 20 4.5V 2.4 2.2 2.0 I D = 66A 1.8 1.6 I D = 33A 1.4 1.2 1.0 0.8 10 3.5V 0.6 0 0.4 0 2 4 6 8 10 12 14 -50 -25 0 VD S - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to 0.5 I D25 Value Fig. 6. Drain Current vs. Case Temperature vs. I D 70 3.0 2.8 60 VGS = 10V 2.6 TJ = 125 °C 2.4 50 I D - Amperes R D S ( o n ) - Normalized 8 2.2 2.0 1.8 1.6 40 30 20 1.4 1.2 10 TJ = 25°C 1.0 0.8 0 0 20 40 60 I D 80 100 - Amperes © 2008 IXYS Corporation, All rights reserved 120 140 160 -50 -25 0 25 50 75 100 T C - Degrees Centigrade IXFN66N50Q2 Fig. 8. Transconductance Fig. 7. Input Admittance 100 90 90 80 70 70 60 TJ = 125°C 50 25°C 40 - 40°C g f s - Siemens I D - Amperes 80 TJ = - 40 °C 30 25°C 60 125°C 50 40 30 20 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 10 160 9 VDS = 250V 8 ID = 33A 7 IG = 10m A 140 120 VG S - Volts I S - Amperes 80 100 120 140 D - Amperes Fig. 10. Gate Charge 180 100 80 60 60 I TJ = 125 °C 6 5 4 3 40 2 TJ = 25°C 20 1 0 0 0.4 0.5 0.6 0.7 0.8 VS D 0.9 1.0 1.1 1.2 1.3 0 20 40 - Volts 60 Q 80 G 100 120 140 160 180 200 - nanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100000 1000 RDS(on) Limit Ciss I D - Amperes Capacitance - picoFarads f = 1MHz 10000 Coss 1000 100 25µs 100µs 1ms 10m s 10 TJ = 150ºC DC TC = 25ºC Crss Single Pulse 1 100 0 5 10 15 20 25 30 35 40 VD S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 VD S - Volts 1000 Fig. 13. Maximum Transient Thermal Impedance Z ( t h ) J C - ºC / W 1.00 0.10 0.01 0.00 0.1 1 10 100 1000 10000 Pulse Width - milliseconds © 2008 IXYS Corporation, All rights reserved IXYS REF: F_66N50Q2(94) 5-28-08-C