IXFN50N80Q2 HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 800 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA EAS 50 A 200 A TC = 25°C TC = 25°C 50 5 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 1135 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight S D G = Gate S = Source Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features z z z z z z z z z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 800 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C © 2010 IXYS CORPORATION, All Rights Reserved International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Rectifier Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D = Drain Easy to Mount Space Savings High Power Density Applications V 5.5 V ±200 nA 50 μA 3 mA z z z z z Switch-Mode and Resonant-Mode Power Supplies >500kHz Switching DC-DC Converters DC Choppers Pulse Generation Laser Drivers 160 mΩ DS99028C(01/10) IXFN50N80Q2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 32 VDS = 10V, ID = 0.5 • ID25, Note 1 48 S 13.5 nF 1180 pF 213 pF Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf 26 ns Resistive Switching Times 25 ns VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 60 ns RG = 1Ω (External) 13 ns 260 nC 56 nC 120 nC Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd (M4 screws (4x) supplied) 0.11 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 50A, VGS = 0V, Note 1 trr QRM IF = 25A, VGS = 0V IRM -di/dt = 100A/μs VR = 100V 50 A 200 A 1.5 V 1.1 300 ns μC 8.0 A Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN50N80Q2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 100 50 VGS = 10V 7V 45 80 40 70 35 6V ID - Amperes ID - Amperes VGS = 10V 7V 90 30 25 20 15 60 6V 50 40 30 5V 10 20 5 10 0 5V 0 0 1 2 3 4 5 6 7 8 0 3 6 9 12 15 18 21 24 27 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 50 3.2 VGS = 10V VGS = 10V 45 2.8 40 R DS(on) - Normalized 6V ID - Amperes 35 5V 30 25 20 15 2.4 I D = 50A 2.0 I D = 25A 1.6 1.2 10 0.8 5 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 60 2.8 2.6 VGS = 10V 50 TJ = 125ºC 2.4 2.2 40 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.0 1.8 1.6 30 20 1.4 TJ = 25ºC 1.2 10 1.0 0.8 0 0 10 20 30 40 50 60 70 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 80 90 100 110 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN50N80Q2 Fig. 8. Transconductance Fig. 7. Input Admittance 100 100 90 90 80 80 g f s - Siemens ID - Amperes 70 TJ = 125ºC 25ºC - 40ºC 60 50 40 TJ = - 40ºC 70 25ºC 60 50 125ºC 40 30 30 20 20 10 10 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 10 20 30 40 VGS - Volts 50 60 70 80 90 100 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 160 9 140 VDS = 400V I D = 25A 8 I G = 10mA 120 100 VGS - Volts IS - Amperes 7 80 60 5 4 3 TJ = 125ºC 40 6 2 TJ = 25ºC 20 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 VSD - Volts Fig.4012. Maximum Transient Thermal Impedance 80 120 160 200 240 QG - NanoCoulombs 1.000 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 0.200 f = 1 MHz 10,000 Z (th)JC - ºC / W Capacitance - PicoFarads 0.100 Ciss Coss 1,000 0.010 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:F_50N80Q2(95)1-18-10-C