IXFN140N30P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V VGSS Continuous ±20 V VGSM Transient ± 30 V TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM IA 300V 110A Ω 24mΩ 200ns miniBLOC, SOT-227 B E153432 Symbol ID25 ILRMS IDM = = ≤ ≤ S G S D 110 100 300 A A A TC = 25°C 70 A EAS TC = 25°C 5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 700 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C • Low package inductance 2500 3000 V~ V~ Advantages 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g Applications V • DC-DC coverters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC and DC motor control • Uninterrupted power supplies • High speed power switching applications TJ TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md t = 1min t = 1s Mounting torque Terminal connection torque Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 70A, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 20 5.0 V ±200 nA 25 1 μA mA 24 mΩ G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • Fast intrinsic diode • Avalanche Rated • Low RDS(ON) and QG • Easy to mount • Space savings • High power density DS99571F(05/08) IXFN140N30P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 50 VDS = 20V, ID = 70A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 70A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 70A Qgd 90 S 14.8 nF 1830 pF 55 pF 30 ns 30 ns 100 ns 20 ns 185 nC 72 nC 60 nC RthJC 0.18 RthCS °C/W °C/W 0.05 Source-Drain Diode SOT-227B Outline Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 140 A ISM Repetitive, pulse width limited by TJM 560 A VSD IF = 70A, VGS = 0V, Note 1 1.3 V trr QRM IRM IF = 25A, -di/dt = 100A/μs 200 ns μC A 0.6 6.0 VR = 100V Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN140N30P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 140 280 VGS = 10V 8V 120 100 200 7V ID - Amperes ID - Amperes VGS = 10V 8V 240 80 60 6V 160 7V 120 6V 40 80 20 40 5V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 140 12 14 16 18 20 3.2 VGS = 10V 8V 7V VGS = 10V 2.8 RDS(on) - Normalized 120 100 ID - Amperes 10 Fig. 4. RDS(on) Normalized to ID = 70A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 80 6V 60 40 5V 20 2.4 I D = 140A 2.0 I D = 70A 1.6 1.2 0.8 0 0.4 0 1 2 3 4 5 6 7 -50 8 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 70A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.0 120 2.8 110 VGS = 10V TJ = 125ºC 2.6 External Lead Current Limit 100 90 2.4 ID - Amperes RDS(on) - Normalized 8 VDS - Volts VDS - Volts 2.2 2.0 1.8 1.6 80 70 60 50 40 1.4 30 1.2 20 TJ = 25ºC 1.0 10 0.8 0 0 40 80 120 160 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 200 240 280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN140N30P Fig. 8. Transconductance Fig. 7. Input Admittance 180 140 160 120 140 g f s - Siemens ID - Amperes 100 120 TJ = 125ºC 25ºC - 40ºC 100 80 TJ = - 40ºC 25ºC 125ºC 80 60 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 200 160 180 200 Fig. 10. Gate Charge 10 300 9 VDS = 150V 8 I G = 10mA I D = 70A 250 7 200 VGS - Volts IS - Amperes 80 ID - Amperes 150 100 6 5 4 TJ = 125ºC 3 TJ = 25ºC 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 20 40 VSD - Volts 80 100 120 140 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000 RDS(on) Limit Ciss 10,000 1,000 ID - Amperes Capacitance - PicoFarads 60 Coss 100 25µs 100µs 1ms 10 10ms DC 100 TJ = 150ºC TC = 25ºC Single Pulse Crss f = 1 MHz 1 10 0 5 10 15 20 25 30 35 40 VDS - Volts 10 100 1000 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_140N30P(93)5-13-08-A IXFN140N30P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_140N30P(93)5-13-08-B