PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFN 64N60P RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 600 V 50 A 96 m Ω 200 ns miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 50 A IDM TC = 25°C, pulse width limited by TJM 150 A IAR TC = 25°C 64 A EAR TC = 25°C 80 mJ EAS TC = 25°C 3.5 J dv/dt IS ≤IDM, di/dt £ 100 A/µs, VDD ≤ VDSS, TJ ≤150°C, RG = 2 Ω 20 V/ns PD TC = 25°C 700 W -55 ... +150 150 -55 ... +150 300 °C °C °C °C 2500 V~ TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, 1 minute Md Mounting torque Terminal torque 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. Weight 30 g Symbol Test Conditions (TJ = 25° C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 3 mA 600 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25, Note 1 © 2006 IXYS All rights reserved TJ = 125° C V 5.0 V ±200 nA 25 1000 µA µA 96 mΩ G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays • • • • Advantages • Easy to mount • Space savings • High power density DS99443E(01/06) IXFN 64N60P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, Note 1 40 63 S 12 nF 1150 pF 80 pF Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss Crss td(on) 28 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 23 ns td(off) RG = 1 Ω (External) 79 ns 24 ns 200 nC 70 nC 68 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.18 0.05 RthCK Source-Drain Diode miniBLOC, SOT-227 B °C/W °C/W Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 64 A ISM Repetitive 150 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25A, -di/dt = 100 A/µs 200 ns QRM IRM VR = 100V 0.6 6.0 M4 screws (4x) supplied Dim. Millimeter Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 µC A Notes: 1. Pulse test, t ≤300 µs, duty cycle d≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Inches Min. Max. 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFN 64N60P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 65 160 V GS = 10V 8V 7V 60 55 V GS = 10V 8V 140 50 120 I D - Amperes I D - Amperes 45 40 35 30 6V 25 7V 100 80 60 20 6V 40 15 10 20 5V 5 5V 0 0 0 1 2 3 4 5 6 7 0 2 4 6 65 12 14 16 18 20 3.1 V GS = 10V 7V 60 55 V GS = 10V 2.8 2.5 R DS(on) - Normalized 50 45 I D - Amperes 10 Fig. 4. R DS(on) Normalized to ID = 32A v s. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 6V 40 35 30 25 20 5V 15 2.2 I D = 64A 1.9 1.6 I D = 32A 1.3 1 10 0.7 5 0 0.4 0 2 4 6 8 10 12 -50 14 -25 V DS - Volts 0 25 50 75 100 125 150 T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 32A v s. Drain Current Fig. 6. Maximum Drain Current v s. Case Temperature 55 3.2 3 V GS = 10V 50 TJ = 125ºC 2.8 45 2.6 40 2.4 I D - Amperes R DS(on) - Normalized 8 V DS - Volts V DS - Volts 2.2 2 1.8 1.6 35 30 25 20 15 1.4 10 TJ = 25ºC 1.2 5 1 0.8 0 0 20 40 60 80 I D - Amperes © 2006 IXYS All rights reserved 100 120 140 160 -50 -25 0 25 50 75 T J - Degrees Centigrade 100 125 150 IXFN 64N60P Fig. 8. Transconductance Fig. 7. Input Admittance 100 130 120 90 110 80 100 g f s - Siemens I D - Amperes 70 60 50 TJ = 125ºC 25ºC - 40ºC 40 90 80 TJ = - 40ºC 25ºC 125ºC 70 60 50 40 30 30 20 20 10 10 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 10 20 30 V GS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 70 80 90 100 160 180 200 10 V DS = 300V 9 120 I D = 32A 8 100 I G = 10mA V GS - Volts 7 80 60 TJ = 125ºC 6 5 4 3 40 TJ = 25ºC 2 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 20 40 V SD - Volts 60 80 100 120 140 Q G - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000 f = 1 MHz TJ = 150ºC TC = 25ºC C iss Capacitance - PicoFarads 60 Fig. 10. Gate Charge 140 I S - Amperes 40 I D - Amperes RDS(on) Limit I D - Amperes 10,000 1,000 C oss 100 25µs 100µs 1ms 10 100 10ms DC C rss 10 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 V DS - Volts 1000 IXFN 64N60P Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC / W 1.000 0.100 0.010 0.0001 0.001 0.01 Pulse W idth - Seconds © 2006 IXYS All rights reserved 0.1 1 10