PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 TO-220AB (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS D (TAB) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 800 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 800 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 10 A IDM TC = 25°C, Pulse Width Limited by TJM 30 A G IA TC = 25°C 5 A TC = 25°C 600 mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 300 W -55 ... +150 °C TJM 150 °C z Tstg -55 ... +150 °C z TL 1.6mm (0.062) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Md Mounting Torque 1.13 / 10 Nm/lb.in. Weight TO-263 TO-220 TO-3P TO-247 2.5 3.0 5.5 6.0 g g g g (TO-220,TO-247) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VGS = 0V, ID = 250μA 800 VGS(th) VDS = VGS, ID = 2.5mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved D S G = Gate S = Source D (TAB) D = Drain TAB = Drain Features z z International Standard Packages Avalanche Rated Low Package Inductance Easy to Drive and to Protect Advantages z z z Easy to Mount Space Savings High Power Density Applications Characteristic Values Min. Typ. Max. BVDSS D (TAB) TO-247 (IXFH) EAS TJ = 800V = 10A Ω ≤ 1.1Ω ≤ 250ns z V 5.5 V ±100 nA 25 μA 500 μA 1.1 Ω z z z z Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99432F(08/09) IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs 7 VDS= 20V, ID = 0.5 • ID25, Note 1 11 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 2050 pF 172 pF 16 pF 21 ns 22 ns 62 ns 22 ns 40 nC 12 nC 14 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.42 °C/W RthJC RthCS RthCS S (TO-220) (TO-247 & TO-3P) °C/W °C/W 0.50 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 10 A ISM Repetitive, Pulse WidthLlimited by TJM 30 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 10A, VGS = 0V 200 250 ns -di/dt = 100A/μs VR = 100V 3.0 A 0.6 μC IRM QRM Note 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Fig. 1. Forward-Bias Safe Operating Area I D - Amperes 100.0 10.0 25µs 100µs 1.0 T J = 150ºC T C = 25ºC Single Pulse 1ms 0.1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P Fig. 2. Output Characteristics Fig. 3. Extended Output Characteristics @ 25ºC @ 25ºC 10 18 VGS = 10V 9 8 8V 14 I D - Amperes 7 I D - Amperes VGS = 10V 16 8V 7V 6V 6 5 4 3 7V 12 10 8 6V 6 4 2 1 2 5V 0 5V 0 0 2 4 6 8 10 12 14 0 3 6 9 12 Fig. 4. Output Characteristics 18 21 24 27 30 Fig. 5. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature @ 125ºC 10 3.2 VGS = 10V 9 2.8 7 R D S ( o n ) - Normalized 7V 8 I D - Amperes 15 VD S - Volts V D S - Volts 6V 6 5 4 3 5V 2 VGS = 10V 2.4 2.0 ID = 10A 1.6 ID = 5A 1.2 0.8 1 0 0.4 0 3 6 9 12 15 18 21 24 27 30 -50 -25 0 VD S - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 6. RDS(on) Normalized to Fig. 7. Drain Current vs. Case Temperature 0.5 I D25 Value vs. I D 11 3.0 10 VGS = 10V 9 TJ = 125 ºC 8 2.2 I D - Amperes R D S ( o n ) - Normalized 2.6 1.8 1.4 7 6 5 4 3 TJ = 25 ºC 1.0 2 1 0 0.6 0 2 4 6 8 I D 10 12 14 - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 16 18 20 -50 -25 0 25 50 75 100 T C - Degrees Centigrade IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P Fig. 9. Transconductance 10 18 9 16 8 14 7 6 5 4 TJ = 125º C 3 12 g f s - Siemens I D - Amperes Fig. 8. Input Admittance 10 8 25º C - 40º C 2 6 TJ = - 40 ºC 4 25º C 125º C 2 1 0 0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 1 2 3 VG S - Volts 30 10 27 9 VDS = 400V 24 8 ID = 5A 21 7 IG = 10m A 18 15 12 TJ = 125ºC 5 6 7 8 9 10 35 40 - Amperes 6 5 4 3 6 2 TJ = 25ºC 3 1 0 0 0.4 0.5 0.6 0.7 VS D 0.8 0.9 1.0 1.1 0 5 10 - Volts 15 Q G 20 25 30 - nanoCoulombs Fig. 13. Maximum Transient Thermal Impedance Fig. 12. Capacitance 10000 1.00 f = 1MHz C iss Z ( t h ) J C - ºC / W Capacitance - picoFarads D Fig. 11. Gate Charge VG S - Volts I S - Amperes Fig. 10. Source Current vs. Source-To-Drain Voltage 9 4 I 1000 C oss 100 0.10 C rss 10 0.01 0 5 10 15 20 25 30 35 40 V D S - Volts 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_10N80P(5J)8-18-09-A IXFA10N80P IXFH10N80P IXFP10N80P IXFQ10N80P TO-220 (IXFP) Outline TO-263 (IXFA) Outline TO-3P (IXFQ) Outline 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain TO-247 (IXFH) Outline Dim. 1 2 ∅P 3 e Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain © 2009 IXYS CORPORATION, All Rights Reserved Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain