IXFK30N100Q2 IXFX30N100Q2 HiPerFETTM Power MOSFETs VDSS ID25 = 1000V = 30A Ω ≤ 400mΩ ≤ 300ns RDS(on) Q2-Class trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 30 120 A A IA EAS TC = 25°C TC = 25°C 30 4 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 735 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque (IXFK) 1.13/10 Nm/lb.in. FC Mounting force (IXFX) 20..120 /4.5..27 N/lb. Weight TO-264 PLUS247 10 6 g g Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION,All rights reserved TJ = 125°C V 5.5 V ± 200 nA 50 2 μA mA 400 mΩ G D (TAB) S PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features • Double metal process for low gate resistance • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Avalanche energy and current rated • Fast intrinsic Rectifier Advantages • Easy to mount • Space savings • High power density DS99160A(5/08) IXFK30N100Q2 IXFX30N100Q2 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 10V, ID = 0.5 • ID25, Note 1 20 Ciss Coss TO-264 (IXFK) Outline 30 S 9400 pF VGS = 0V, VDS = 25V, f = 1MHz Crss 766 pF 153 pF td(on) Resistive Switching Times 22 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 14 ns td(off) RG = 1Ω (External) 60 ns 10 ns 186 nC 46 nC 82 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions IS VGS = 0V ISM VSD trr QRM IRM °C/W 0.17 Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. 30 A Repetitive, pulse width limited by TJM 120 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns μC A IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1 10 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM (IXFX) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK30N100Q2 IXFX30N100Q2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 30 60 VGS = 10V 27 VGS = 10V 7V 24 21 6V 18 I D - Amperes I D - Amperes 7V 50 15 5.5V 12 9 40 6V 30 20 5.5V 6 10 5V 3 0 5V 0 0 1 2 3 4 5 6 7 8 9 10 0 11 12 3 6 9 12 Fig. 3. Output Characteristics @ 125ºC 21 24 27 30 3.2 VGS = 10V 27 R D S ( o n ) - Normalized 21 18 5.5V 15 12 9 VGS = 10V 2.8 6V 24 I D - Amperes 18 Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature 30 5V 6 2.4 2.0 ID = 30A 1.6 ID = 15A 1.2 0.8 3 4.5V 0 0 3 6 9 12 15 18 0.4 21 24 27 -50 -25 0 VD S - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to 0.5 I D25 Value Fig. 6. Drain Current vs. Case Temperature vs. I D 33 2.6 30 2.4 TJ = 125ºC 27 2.2 24 2.0 1.8 I D - Amperes R D S ( o n ) - Normalized 15 V DS - Volts V D S - Volts VGS = 10V 1.6 1.4 21 18 15 12 9 1.2 6 TJ = 25ºC 1.0 3 0 0.8 0 5 10 15 20 I 25 D 30 35 - Amperes © 2008 IXYS CORPORATION,All rights reserved 40 45 50 55 60 -50 -25 0 25 50 75 100 T C - Degrees Centigrade IXFK30N100Q2 IXFX30N100Q2 Fig. 8. Transconductance Fig. 7. Input Admittance 60 40 50 30 45 TJ = 125ºC 25ºC - 40ºC 25 40 g f s - Siemens I D - Amperes TJ = - 40ºC 55 35 20 15 25ºC 35 30 125ºC 25 20 15 10 10 5 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 5 10 15 20 V GS - Volts I Fig. 9. Source Current vs. Source-To-Drain Voltage 10 80 9 VDS = 500V 8 ID = 15A 7 IG = 10mA 70 60 VG S - Volts I S - Amperes 25 30 35 40 45 50 - Amperes Fig. 10. Gate Charge 90 50 40 30 D TJ = 125ºC 6 5 4 3 20 TJ = 25ºC 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 VS D 0.8 0.9 1.0 1.1 0 1.2 20 40 60 - Volts Q 80 G 100 120 140 160 180 200 - nanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1.00 100000 Ciss Z ( t h ) J C - ºC / W Capacitance - picoFarads f = 1MHz 10000 Coss 1000 0.10 0.01 C rss 0.00 100 0 5 10 15 20 25 30 35 40 VD S - Volts 0.1 1 10 100 1000 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_30N100Q2(94)5-27-08-A