IXYS IXFK30N100Q2_08

IXFK30N100Q2
IXFX30N100Q2
HiPerFETTM
Power MOSFETs
VDSS
ID25
= 1000V
= 30A
Ω
≤ 400mΩ
≤ 300ns
RDS(on)
Q2-Class
trr
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1000
1000
V
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
30
120
A
A
IA
EAS
TC = 25°C
TC = 25°C
30
4
A
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
735
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Md
Mounting torque
(IXFK)
1.13/10
Nm/lb.in.
FC
Mounting force
(IXFX)
20..120 /4.5..27
N/lb.
Weight
TO-264
PLUS247
10
6
g
g
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
1000
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2008 IXYS CORPORATION,All rights reserved
TJ = 125°C
V
5.5
V
± 200
nA
50
2
μA
mA
400
mΩ
G
D
(TAB)
S
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• Double metal process for low gate
resistance
• International standard packages
• Epoxy meet UL 94 V-0, flammability
classification
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
DS99160A(5/08)
IXFK30N100Q2
IXFX30N100Q2
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS= 10V, ID = 0.5 • ID25, Note 1
20
Ciss
Coss
TO-264 (IXFK) Outline
30
S
9400
pF
VGS = 0V, VDS = 25V, f = 1MHz
Crss
766
pF
153
pF
td(on)
Resistive Switching Times
22
ns
tr
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
14
ns
td(off)
RG = 1Ω (External)
60
ns
10
ns
186
nC
46
nC
82
nC
tf
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
°C/W
0.17
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
30
A
Repetitive, pulse width limited by TJM
120
A
IF = IS, VGS = 0V, Note 1
1.5
V
300
ns
μC
A
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
1
10
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS247TM (IXFX) Outline
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFK30N100Q2
IXFX30N100Q2
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25ºC
30
60
VGS = 10V
27
VGS = 10V
7V
24
21
6V
18
I D - Amperes
I D - Amperes
7V
50
15
5.5V
12
9
40
6V
30
20
5.5V
6
10
5V
3
0
5V
0
0
1
2
3
4
5
6
7
8
9
10
0
11 12
3
6
9
12
Fig. 3. Output Characteristics
@ 125ºC
21
24
27
30
3.2
VGS = 10V
27
R D S ( o n ) - Normalized
21
18
5.5V
15
12
9
VGS = 10V
2.8
6V
24
I D - Amperes
18
Fig. 4. RDS(on) Normalized to 0.5 I D25 Value
vs. Junction Temperature
30
5V
6
2.4
2.0
ID = 30A
1.6
ID = 15A
1.2
0.8
3
4.5V
0
0
3
6
9
12
15
18
0.4
21
24
27
-50
-25
0
VD S - Volts
25
50
75
100
125
150
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to 0.5 I D25 Value
Fig. 6. Drain Current vs. Case
Temperature
vs. I D
33
2.6
30
2.4
TJ = 125ºC
27
2.2
24
2.0
1.8
I D - Amperes
R D S ( o n ) - Normalized
15
V DS - Volts
V D S - Volts
VGS = 10V
1.6
1.4
21
18
15
12
9
1.2
6
TJ = 25ºC
1.0
3
0
0.8
0
5
10
15 20
I
25
D
30 35
- Amperes
© 2008 IXYS CORPORATION,All rights reserved
40 45
50 55
60
-50
-25
0
25
50
75
100
T C - Degrees Centigrade
IXFK30N100Q2
IXFX30N100Q2
Fig. 8. Transconductance
Fig. 7. Input Admittance
60
40
50
30
45
TJ = 125ºC
25ºC
- 40ºC
25
40
g f s - Siemens
I D - Amperes
TJ = - 40ºC
55
35
20
15
25ºC
35
30
125ºC
25
20
15
10
10
5
5
0
0
3.5
4.0
4.5
5.0
5.5
6.0
0
6.5
5
10
15
20
V GS - Volts
I
Fig. 9. Source Current vs. Source-To-Drain
Voltage
10
80
9
VDS = 500V
8
ID = 15A
7
IG = 10mA
70
60
VG S - Volts
I S - Amperes
25
30
35
40
45
50
- Amperes
Fig. 10. Gate Charge
90
50
40
30
D
TJ = 125ºC
6
5
4
3
20
TJ = 25ºC
2
10
1
0
0
0.3
0.4
0.5
0.6
0.7
VS
D
0.8
0.9
1.0
1.1
0
1.2
20
40
60
- Volts
Q
80
G
100 120 140 160 180 200
- nanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
1.00
100000
Ciss
Z ( t h ) J C - ºC / W
Capacitance - picoFarads
f = 1MHz
10000
Coss
1000
0.10
0.01
C rss
0.00
100
0
5
10
15
20
25
30
35
40
VD S - Volts
0.1
1
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_30N100Q2(94)5-27-08-A