IXFC14N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = = ≤ ≤ 600V 8A Ω 630mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 8 A IDM TC = 25°C, pulse width limited by TJM 42 A IA TC = 25°C 14 A EAS TC = 25°C 900 mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 125 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 11..66 / 2.5..14.6 N/lb. 2 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting force t = 1min t = 1s Weight G D S G = Gate S = Source Isolated Tab D = Drain Features UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Avanlache rated Fast intrinsic diode Advantages Easy to mount Space savings High power density Applications: Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 600 VGS(th) VDS = VGS, ID = 2.5mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 7A, Note 1 © 2008 IXYS CORPORATION, All rights reserved V 5.5 V ±100 nA TJ = 125°C Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls 5 μA 500 μA 630 mΩ DS99409F(12/08) IXFC14N60P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 7 VDS = 20V, ID = 7A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 7A RG = 10Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 7A Qgd 13 S 2500 pF 215 pF 13 pF 23 ns 27 ns 70 ns 26 ns 36 nC 16 nC 12 nC ISOPLUS220TM (IXFC) Outline Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3. 1.00 °C/W RthJC RthCS 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 14 A ISM Repetitive, pulse width limited by TJM 42 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 14A, -di/dt = 100A/μs 6.0 0.6 VR = 100V, VGS = 0V Ref: IXYS CO 0177 R0 200 ns nC A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFC14N60P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 30 14 VGS = 10V 9V 12 VGS = 10V 9V 27 24 21 ID - Amperes ID - Amperes 10 8V 8 6 18 8V 15 12 9 4 7V 6 2 3 0 7V 0 0 1 2 3 4 5 6 7 8 0 3 6 9 15 18 21 24 27 30 Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 14 3.2 VGS = 10V 8V VGS = 10V 2.8 RDS(on) - Normalized 12 10 ID - Amperes 12 VDS - Volts VDS - Volts 7V 8 6 4 2.4 I D = 14A 2.0 I D = 7A 1.6 1.2 0.8 2 6V 0.4 0 0 2 4 6 8 10 12 14 16 -50 18 -25 0 VDS - Volts 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Drain Current 9 3.4 VGS = 10V 8 3.0 TJ = 125ºC 7 2.6 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.2 1.8 6 5 4 3 1.4 TJ = 25ºC 2 1.0 1 0.6 0 0 3 6 9 12 15 18 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 21 24 27 30 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS REF: T_14N60P(5J)12-22-08-G IXFC14N60P Fig. 8. Transconductance Fig. 7. Input Admittance 50 27 45 24 40 21 g f s - Siemens ID - Amperes 35 TJ = 125ºC 25ºC - 40ºC 30 25 20 TJ = - 40ºC 25ºC 125ºC 18 15 12 9 15 6 10 3 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 9.5 5 10 15 VGS - Volts 20 25 30 35 40 45 50 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 50 10 45 9 VDS = 300V 40 8 I G = 10mA 35 7 VGS - Volts IS - Amperes I D = 7A 30 25 TJ = 125ºC 20 6 5 4 3 15 TJ = 25ºC 10 2 5 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 4 8 VSD - Volts 12 16 20 24 28 32 36 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 Ciss 1,000 100 ID - Amperes Capacitance - PicoFarads RDS(on) Limit Coss 25µs 10 100µs 1ms 10ms 1 DC 10 TJ = 150ºC Crss TC = 25ºC Single Pulse f = 1 MHz 1 0 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 VDS - Volts 1000 IXFC14N60P Fig. 13. Maximum Transient Thermal Impedance 10.00 Z (th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_14N60P(5J)12-22-08-G