IXYS IXFC14N60P

IXFC14N60P
PolarHVTM HiPerFET
Power MOSFET
VDSS
ID25
RDS(on)
trr
(Electrically Isolated Back Surface)
=
=
≤
≤
600V
8A
Ω
630mΩ
200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
ISOPLUS 220TM
E153432
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
600
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
600
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
8
A
IDM
TC = 25°C, pulse width limited by TJM
42
A
IA
TC = 25°C
14
A
EAS
TC = 25°C
900
mJ
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
10
V/ns
PD
TC = 25°C
125
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
2500
3000
V~
V~
11..66 / 2.5..14.6
N/lb.
2
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
Md
Mounting force
t = 1min
t = 1s
Weight
G
D
S
G = Gate
S = Source
Isolated Tab
D = Drain
Features
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Avanlache rated
Fast intrinsic diode
Advantages
Easy to mount
Space savings
High power density
Applications:
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
BVDSS
VGS = 0V, ID = 250μA
600
VGS(th)
VDS = VGS, ID = 2.5mA
3.0
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 7A, Note 1
© 2008 IXYS CORPORATION, All rights reserved
V
5.5
V
±100 nA
TJ = 125°C
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor drives
Robotics and servo controls
5 μA
500 μA
630 mΩ
DS99409F(12/08)
IXFC14N60P
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
gfs
7
VDS = 20V, ID = 7A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 7A
RG = 10Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 7A
Qgd
13
S
2500
pF
215
pF
13
pF
23
ns
27
ns
70
ns
26
ns
36
nC
16
nC
12
nC
ISOPLUS220TM (IXFC) Outline
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
1.00 °C/W
RthJC
RthCS
0.21
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
14
A
ISM
Repetitive, pulse width limited by TJM
42
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
QRM
IRM
IF = 14A, -di/dt = 100A/μs
6.0
0.6
VR = 100V, VGS = 0V
Ref: IXYS CO 0177 R0
200 ns
nC
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFC14N60P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
30
14
VGS = 10V
9V
12
VGS = 10V
9V
27
24
21
ID - Amperes
ID - Amperes
10
8V
8
6
18
8V
15
12
9
4
7V
6
2
3
0
7V
0
0
1
2
3
4
5
6
7
8
0
3
6
9
15
18
21
24
27
30
Fig. 4. RDS(on) Normalized to ID = 7A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
14
3.2
VGS = 10V
8V
VGS = 10V
2.8
RDS(on) - Normalized
12
10
ID - Amperes
12
VDS - Volts
VDS - Volts
7V
8
6
4
2.4
I D = 14A
2.0
I D = 7A
1.6
1.2
0.8
2
6V
0.4
0
0
2
4
6
8
10
12
14
16
-50
18
-25
0
VDS - Volts
50
75
100
125
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
Fig. 5. RDS(on) Normalized to ID = 7A Value
vs. Drain Current
9
3.4
VGS = 10V
8
3.0
TJ = 125ºC
7
2.6
ID - Amperes
RDS(on) - Normalized
25
TJ - Degrees Centigrade
2.2
1.8
6
5
4
3
1.4
TJ = 25ºC
2
1.0
1
0.6
0
0
3
6
9
12
15
18
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
21
24
27
30
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS REF: T_14N60P(5J)12-22-08-G
IXFC14N60P
Fig. 8. Transconductance
Fig. 7. Input Admittance
50
27
45
24
40
21
g f s - Siemens
ID - Amperes
35
TJ = 125ºC
25ºC
- 40ºC
30
25
20
TJ = - 40ºC
25ºC
125ºC
18
15
12
9
15
6
10
3
5
0
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
0
9.5
5
10
15
VGS - Volts
20
25
30
35
40
45
50
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
50
10
45
9
VDS = 300V
40
8
I G = 10mA
35
7
VGS - Volts
IS - Amperes
I D = 7A
30
25
TJ = 125ºC
20
6
5
4
3
15
TJ = 25ºC
10
2
5
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
4
8
VSD - Volts
12
16
20
24
28
32
36
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100
10,000
Ciss
1,000
100
ID - Amperes
Capacitance - PicoFarads
RDS(on) Limit
Coss
25µs
10
100µs
1ms
10ms
1
DC
10
TJ = 150ºC
Crss
TC = 25ºC
Single Pulse
f = 1 MHz
1
0
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
VDS - Volts
1000
IXFC14N60P
Fig. 13. Maximum Transient Thermal Impedance
10.00
Z (th)JC - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_14N60P(5J)12-22-08-G