Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ 7.5Ω Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 2.4 6 A A IA EAS TC = 25°C TC = 25°C 2.4 200 A mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 125 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062) from case for 10s Plastic body for 10s Md Mounting torque Weight TO-263 TO-220 TO-247 (TO-220, TO-247) G (TAB) D S TO-247 (IXTH) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1200 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V 4.5 ±50 TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 6.5 V z z z Applications: nA z 5 μA 300 μA z 7.5 z Ω z z © 2008 IXYS CORPORATION, All rights reserved Easy to mount Space savings High power density High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99873A (04/08) IXTA2R4N120P IXTP2R4N120P IXTH2R4N120P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max gfs VDS= 20V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 1.2 2.0 S 1207 57 11.2 pF pF pF Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 18Ω (External) 22 25 70 32 ns ns ns ns VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 37 6 20 nC nC nC (TO-220) (TO-247) 0.50 0.21 Source-Drain Diode TO-220 (IXTP) Outline Pins: 1 - Gate 2 - Drain 1.0 °C/W °C/W °C/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 2.4 A ISM Repetitive, pulse width limited by TJM 7.2 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 2.4A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 920 TO-247 (IXTH) Outline ns 1 2 3 ∅P Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain 3 - Source TO-263 (IXTA) Outline Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA2R4N120P IXTP2R4N120P IXTH2R4N120P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 3.6 2.4 VGS = 10V 7V 2.2 VGS = 10V 7V 3.2 2.0 2.8 6V 1.6 ID - Amperes ID - Amperes 1.8 1.4 1.2 1.0 2.4 6V 2.0 1.6 1.2 0.8 5V 0.6 0.8 5V 0.4 0.4 0.2 0.0 0.0 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 2.4 14 16 18 20 22 24 26 28 30 3.0 VGS = 10V 7V 2.2 2.8 VGS = 10V 2.6 1.8 RDS(on) - Normalized 2.0 ID - Amperes 12 Fig. 4. RDS(on) Normalized to ID = 1.2A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 6V 1.6 1.4 1.2 1.0 5V 0.8 2.4 2.2 2.0 I D = 2.4A 1.8 1.6 I D = 1.2A 1.4 1.2 0.6 1.0 0.4 0.8 0.2 0.6 0.0 0.4 0 5 10 15 20 25 30 35 40 -50 45 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 1.2A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 2.6 VGS = 10V 2.4 2.4 TJ = 125ºC 2.2 2.0 2.0 ID - Amperes RDS(on) - Normalized 10 VDS - Volts VDS - Volts 1.8 1.6 1.6 1.2 1.4 0.8 1.2 0.4 TJ = 25ºC 1.0 0.8 0.0 0.0 0.5 1.0 1.5 2.0 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 2.5 3.0 3.5 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTA2R4N120P IXTP2R4N120P IXTH2R4N120P Fig. 7. Input Admittance Fig. 8. Transconductance 4.0 2.8 TJ = - 40ºC 3.6 2.4 3.2 2.8 g f s - Siemens ID - Amperes 2.0 1.6 TJ = 125ºC 25ºC - 40ºC 1.2 25ºC 2.4 2.0 125ºC 1.6 1.2 0.8 0.8 0.4 0.4 0.0 0.0 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 0.0 6.4 0.4 0.8 VGS - Volts 1.6 2.0 2.4 2.8 3.2 30 35 40 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 8 VDS = 600V 9 7 I D = 1.2A 8 6 I G = 10mA 7 VGS - Volts IS - Amperes 1.2 5 4 TJ = 125ºC 3 6 5 4 3 2 2 TJ = 25ºC 1 1 0 0 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0 0.9 5 VSD - Volts 10 15 20 25 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10000 10.00 Ciss 1000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 100 1.00 0.10 10 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_2R4N120P(3C) 4-02-08-A