IXTF1N400 High Voltage Power MOSFET VDSS ID25 = 4000V = 1A Ω ≤ 60Ω RDS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4000 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 1 A IDM TC = 25°C, Pulse Width Limited by TJM 3 A PD TC = 25°C 160 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 20..120 / 4.5..27 N/lb. 4000 V~ 5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s FC Mounting Force VISOL 50/60Hz, 1 Minute Weight 1 2 Isolated Tab 5 1 = Gate 2 = Source 5 = Drain Features z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V ±100 nA IDSS VDS = 3.2kV, VGS = 0V VDS = 4.0kV VDS = 3.2kV 50 μA 250 μA μA Note 2, TJ = 100°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2012 IXYS CORPORATION, All Rights Reserved 4.0 z VGS(th) RDS(on) 2.0 z 250 60 V Ω z Easy to Mount Space Savings High Power Density Applications z z z z High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems DS100159D(01/12) IXTF1N400 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 50V, ID = 0.5 • ID25, Note 1 0.55 Ciss Coss 0.95 S 2530 pF VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 1A RG = 2Ω (External) Qg(on) Qgs ISOPLUS i4-PakTM (HV) Outline VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 Qgd 93 pF 30 pF 28 ns 24 ns 81 ns 90 ns 78 nC 10 nC 35 nC Pin Pin Pin Pin 1 2 3 4 = = = = Gate Soure Drain Isolated 0.78 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 1 A ISM Repetitive, Pulse Width Limited by TJM 5 A VSD IF = 1A, VGS = 0V, Note 1 4 V trr IF = 1A, -di/dt = 100A/μs, VR = 200V Notes: 3.5 μs 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp Idss measurement. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTF1N400 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 1.4 1 VGS = 10V VGS = 10V 0.9 1.2 0.8 5V 5V 1 ID - Amperes ID - Amperes 0.7 0.6 0.5 4.5V 0.4 0.3 0.8 0.6 4.5V 0.4 4V 0.2 4V 0.2 0.1 3V 3V 0 0 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 250 300 350 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature 400 2.6 1 VGS = 10V 5V 0.9 VGS = 10V 2.2 R DS(on) - Normalized 0.8 0.7 ID - Amperes 50 VDS - Volts 0.6 0.5 4V 0.4 0.3 0.2 1.8 I D = 1.0A I D = 0.5A 1.4 1.0 0.6 3V 0.1 0 0.2 0 10 20 30 40 50 60 70 80 90 100 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.4 125 150 125 150 1.2 VGS = 10V 2.2 TJ = 125ºC 0.8 ID - Amperes R DS(on) - Normalized 1 2.0 1.8 1.6 1.4 0.6 0.4 1.2 TJ = 25ºC 0.2 1.0 0 0.8 0 0.2 0.4 0.6 0.8 ID - MilliAmperes © 2012 IXYS CORPORATION, All Rights Reserved 1 1.2 1.4 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTF1N400 Fig. 8. Transconductance Fig. 7. Input Admittance 2 1.4 1.8 TJ = - 40ºC 1.2 1.6 1.4 g f s - Siemens ID - Amperes 1 0.8 TJ = 125ºC 25ºC - 40ºC 0.6 25ºC 1.2 125ºC 1 0.8 0.6 0.4 0.4 0.2 0.2 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5.5 0.2 0.4 0.6 Fig. 9. Forward Voltage Drop of Intrinsic Diode 1 1.2 1.4 Fig. 10. Gate Charge 2.4 10 VDS = 1000V 9 2 I D = 0.5A 8 I G = 10mA 7 1.6 TJ = 25ºC VGS - Volts IS - Amperes 0.8 ID - Amperes VGS - Volts TJ = 125ºC 1.2 0.8 6 5 4 3 2 0.4 1 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 10 20 VSD - Volts 30 40 50 60 70 80 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 1 10,000 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 100 0.1 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_1N400(8P)8-25-09-A