HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q (Electrically Isolated Backside) VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR TC = 25°C TC = 25°C, Note 1 TC = 25°C EAR EAS TC = 25°C TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C 1000 1000 V V ±20 ±30 V V 3.5 16 4 A A A 20 700 mJ mJ 5 V/ns 80 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C 2500 V~ TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min Weight 5 g ISOPLUS 247TM E153432 Isolated backside* G = Gate S = Source D = Drain * Patent pending Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z z Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure z Rated for Unclamped Inductive Load Switching (UIS) z Fast intrinsic Rectifier Symbol Test Conditions VDSS VGS = 0 V, ID = 1mA VGS(th) VDS = VGS, ID = 1.5 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 2, 3 © 2002 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C Applications z DC-DC converters z z 1000 V 3.0 5.0 V z ±100 nA z 50 µA 1 mA 3.0 Ω Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages z Easy assembly z z Space savings High power density DS98860A(12/02) IXFR 4N100Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = IT Notes 2, 3 1.5 2.5 S 1050 pF 120 pF Crss 30 pF td(on) 17 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 15 ns td(off) RG = 2 Ω (External), Notes 2, 3 32 ns tf 18 ns Qg(on) 39 nC 9 nC 22 nC Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Notes 2, 3 Qgd RthJC 1.57 RthCK 0.15 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4 A Repetitive; Note 1 16 A IF = IS, VGS = 0 V, Notes 2, 3 1.5 V 250 ns t rr QRM K/W IF = 50A,-di/dt = 100 A/µs, VR = 100 V 0.52 µC 1.8 A IRM ISOPLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 See IXFH4N100Q data sheet for Characterisitic curves. Note: 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 3. IT = 2 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1