IXYS IXFR44N50Q

HiPerFETTM
Power MOSFETs
ISOPLUS247TM, Q-Class
VDSS
IXFR 44N50Q
IXFR 48N50Q
ID25
RDS(on)
Ω
500 V 34 A 120 mΩ
Ω
500 V 40 A 110 mΩ
trr ≤ 250 ns
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Maximum Ratings
ISOPLUS 247TM
E153432
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
IDM
TC = 25°C, Note 1
IAR
TC = 25°C
34
40
176
192
44
48
A
A
A
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
2.5
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
310
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<30pF)
300
°C
l
2500
V~
5
g
44N50Q
48N50Q
44N50Q
48N50Q
44N50Q
48N50Q
TJ
TJM
Tstg
TL
1.6 mm (0.063 in.) from case for 10 s
VISOL
50/60 Hz, RMS
t = 1 min
Weight
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250µA
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = ±20 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
VGS = 10 V, ID = IT
Notes 2, 3
44N50Q
48N50Q
RDS(on)
© 2002 IXYS All rights reserved
Isolated backside*
G = Gate
S = Source
* Patent pending
l
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
l
Fast intrinsic diode
Applications
l
DC-DC converters
l
l
V
2.0
4.0 V
l
±100 nA
l
120 mΩ
110 mΩ
IXYS advanced low Qg process
l
500
100 µA
2 mA
D = Drain
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
l
Easy assembly
l
l
Space savings
High power density
98702B (6/02)
IXFR 44N50Q
IXFR 48N50Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = IT
Notes 2, 3
45
S
6400
pF
930
pF
Crss
220
pF
td(on)
33
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
30
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
22
ns
td(off)
RG = 1 Ω (External), Notes 2, 3
75
ns
10
ns
190
nC
40
nC
86
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Notes 2, 3
Qgd
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim.
0.40
RthJC
0.15
RthCK
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive; Note 1
VSD
IF = IT, VGS = 0 V, Notes 2, 3
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
t rr
QRM
K/W
IF = 25A,-di/dt = 100 A/µs, VR = 100 V
48
A
192
A
1.5
V
250
ns
1.4
µC
10
A
IRM
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. IXFR44N50Q: IT = 22 A
IXFR48N50Q: IT = 24 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1