HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS(on) Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Maximum Ratings ISOPLUS 247TM E153432 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C, Note 1 IAR TC = 25°C 34 40 176 192 44 48 A A A A A A EAR EAS TC = 25°C TC = 25°C 60 2.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 310 W -55 ... +150 150 -55 ... +150 °C °C °C Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) 300 °C l 2500 V~ 5 g 44N50Q 48N50Q 44N50Q 48N50Q 44N50Q 48N50Q TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250µA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 125°C VGS = 10 V, ID = IT Notes 2, 3 44N50Q 48N50Q RDS(on) © 2002 IXYS All rights reserved Isolated backside* G = Gate S = Source * Patent pending l Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) l Fast intrinsic diode Applications l DC-DC converters l l V 2.0 4.0 V l ±100 nA l 120 mΩ 110 mΩ IXYS advanced low Qg process l 500 100 µA 2 mA D = Drain Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages l Easy assembly l l Space savings High power density 98702B (6/02) IXFR 44N50Q IXFR 48N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = IT Notes 2, 3 45 S 6400 pF 930 pF Crss 220 pF td(on) 33 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 30 tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT 22 ns td(off) RG = 1 Ω (External), Notes 2, 3 75 ns 10 ns 190 nC 40 nC 86 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Notes 2, 3 Qgd ISOPLUS 247 OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. 0.40 RthJC 0.15 RthCK Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive; Note 1 VSD IF = IT, VGS = 0 V, Notes 2, 3 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. t rr QRM K/W IF = 25A,-di/dt = 100 A/µs, VR = 100 V 48 A 192 A 1.5 V 250 ns 1.4 µC 10 A IRM A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 Note: 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 3. IXFR44N50Q: IT = 22 A IXFR48N50Q: IT = 24 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1