Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 (Electrically Isolated Back Surface) RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C, Pulse width limited by TJM IAR TC = 25°C 26 24 104 96 26 24 A A A A A A EAR TC = 25°C 30 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 5 V/ns PD Maximum Ratings 26N50 24N50 26N50 24N50 26N50 24N50 TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS 250 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 6 g t = 1 minute leads-to-tab Weight Symbol Test Conditions VDSS VGS = 0 V, ID = 250uA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 1 & 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 V 4 V ±100 nA TJ = 25°C TJ = 125°C 200 1 mA mA 26N50 24N50 0.20 0.23 W W IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved G D Isolated back surface* G = Gate S = Source D = Drain * Patent pending Features TC = 25°C TL ISOPLUS 247TM • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control Advantages • Easy assembly • Space savings • High power density 98526A (2/99) 1-2 IXFR 24N50 IXFR 26N50 Symbol Test Conditions gfs VDS = 15 V; ID = IT Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 11 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 21 S 4200 pF 450 pF 135 pF 16 25 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 33 45 ns td(off) RG = 1 W (External), 65 80 ns 30 40 ns 135 160 nC 28 40 nC 62 85 nC 0.50 K/W tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd RthJC RthCK 0.15 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 26 A Repetitive; pulse width limited by TJM 104 A IF = IS, VGS = 0 V, Note 1 1.5 V t rr QRM K/W IF = Is, -di/dt = 100 A/ms, VR = 100 V IRM TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 1 2 10 15 250 400 1.5 ISOPLUS 247 (IXFR) OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 ns ns mC mC A A Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 % IT = 13A 2. IT test current: IXFR26N50 IXFR24N50 IT = 12A 3.See IXFH26N50 data sheet for characteristic curves. © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2