Preliminary Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IL(RMS) IDM TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 360 160 900 A A A IA EAS TC = 25°C TC = 25°C 100 3 A J PD TC = 25°C 1250 W dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G G BVDSS VGS = 0V, ID = 1mA 100 VGS(th) VDS = VGS, ID = 3mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 100A, Notes 1 & 2 4.5 ± 200 TJ = 150°C z z z z z D = Drain Tab = Drain International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Easy to Mount Space Savings High Power Density V Applications V z z nA Tab S Features z 25 μA 2.5 mA z 2.9 mΩ z z z z © 2011 IXYS CORPORATION, All Rights Reserved D G = Gate S = Source z Characteristic Values Min. Typ. Max. Tab S PLUS247 (IXFX) z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D Synchronous Recification DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100210A(02/11) IXFK360N10T IXFX360N10T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 110 VDS = 10V, ID = 60A, Note 1 180 S 33 nF 3160 pF 400 pF 1.20 Ω 47 ns 100 ns 80 ns 160 ns 525 nC 145 nC 165 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) Qg(on) Qgs TO-264 Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.12 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IRM IF = 100A, VGS = 0V QRM -di/dt = 100A/μs VR = 50V A 1440 A 1.2 V 130 6.60 ns A 0.33 μC Dim. The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5,049,961 5,063,307 5,187,117 A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) PRELIMINARY TECHNICAL INFORMATION 4,931,844 5,017,508 5,034,796 Dim. 1 - Gate 2 - Drain 3 - Source 4 - Drain PLUS 247TM Outline 360 Notes 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Includes lead resistance. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Terminals: 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK360N10T IXFX360N10T Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 400 360 VGS = 15V 10V 8V 7V 300 7V 300 6V 240 6V ID - Amperes ID - Amperes VGS = 15V 10V 8V 350 180 5.5V 120 250 200 150 5.5V 100 5V 5V 60 50 4V 4V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 1.0 0.5 1.0 1.5 360 3.0 3.5 2.6 VGS = 15V 10V 8V 7V VGS = 10V R DS(on) - Normalized 2.2 240 ID - Amperes 2.5 Fig. 4. RDS(on) Normalized to ID = 180A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 300 2.0 VDS - Volts VDS - Volts 6V 180 5V 120 60 I D = 360A 1.8 I D = 180A 1.4 1.0 0.6 4V 0 0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Normalized RDS(on) vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 180 3.0 VGS = 10V 160 External Lead Current Limit 2.6 TJ = 175ºC 120 2.2 ID - Amperes R DS(on) - Normalized 140 1.8 1.4 100 80 60 TJ = 25ºC 40 1.0 20 0.6 0 0 40 80 120 160 200 240 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 280 320 360 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFK360N10T IXFX360N10T Fig. 7. Input Admittance Fig. 8. Transconductance 200 350 TJ = - 40ºC 180 300 160 250 g f s - Siemens ID - Amperes 140 120 TJ = 150ºC 100 25ºC 80 - 40ºC 60 25ºC 200 150ºC 150 100 40 50 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20 40 60 80 VGS - Volts 100 120 140 160 180 200 500 550 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 320 VDS = 50V 9 280 I D = 180A 8 I G = 10mA 240 200 VGS - Volts IS - Amperes 7 160 120 TJ = 150ºC 6 5 4 3 80 2 TJ = 25ºC 40 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 50 100 150 200 250 300 350 400 450 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 100.0 RDS(on) Limit Ciss 100µs External Lead Limit 100 10.0 ID - Amperes Capacitance - NanoFarads 25µs Coss 1ms 10 1.0 TJ = 175ºC f = 1 MHz 10ms TC = 25ºC Crss Single Pulse DC 100ms 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXFK360N10T IXFX360N10T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 280 320 RG = 1Ω , VGS = 10V RG = 1Ω , VGS = 10V 280 VDS = 50V I = 200A D t r - Nanoseconds 240 t r - Nanoseconds VDS = 50V 240 200 160 120 I 200 TJ = 125ºC 160 TJ = 25ºC 120 = 100A D 80 80 40 40 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 700 300 90 200 60 100 30 0 4 5 6 7 8 9 300 100 250 90 I D = 200A 200 80 I D = 100A 150 70 100 0 3 25 10 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 400 td(off) - - - - 600 110 TJ = 125ºC 200 100 150 90 TJ = 25ºC 100 80 50 70 550 VDS = 50V 120 250 td(off) - - - - TJ = 125ºC, VGS = 10V 500 450 400 350 I D = 200A 300 250 I D = 100A 200 0 40 60 80 100 120 140 160 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 180 60 200 150 100 50 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = 50V 650 tf 130 t f - Nanoseconds tf RG = 1Ω, VGS = 10V 60 125 700 140 t d(off) - Nanoseconds t f - Nanoseconds t f - Nanoseconds 120 I D = 100A 300 110 t d(off) - Nanoseconds 150 400 350 td(off) - - - - VDS = 50V I D = 200A 2 200 RG = 1Ω, VGS = 10V 350 t d(on) - Nanoseconds t r - Nanoseconds 180 TJ = 125ºC, VGS = 10V 1 180 120 tf td(on) - - - - VDS = 50V 500 160 400 210 600 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 120 ID - Amperes IXFK360N10T IXFX360N10T Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximum Transient Thermal Impedance .sadgsfgsf 0.200 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:F_360N10T(8V)9-23-09