IXYS IXTH182N055T

Preliminary Technical Information
IXTH182N055T
IXTQ182N055T
TrenchMVTM
Power MOSFET
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
= 55
V
= 182
A
≤ 5.0 m Ω
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
VGSM
55
55
V
V
Transient
± 20
V
ID25
ILRMS
IDM
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
182
75
490
A
A
A
IAR
E AS
TC = 25° C
TC = 25° C
25
1.0
A
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤175° C, RG = 5 Ω
3
V/ns
PD
TC = 25° C
360
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
G
TO-3P (IXTQ)
S
G
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Md
Mounting torque
Weight
TO-3P
TO-247
1.13 / 10 Nm/lb.in.
5.5
6
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
g
g
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
55
VGS(th)
VDS = VGS, ID = 250 µA
2.0
IGSS
VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID =25 A, Notes 1, 2
V
TJ = 150° C
3.5
4.0
V
± 200
nA
5
250
µA
µA
5.0
mΩ
(TAB)
D
D
(TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
DS99682 (11/06)
© 2006 IXYS CORPORATION All rights reserved
IXTH182N055T
IXTQ182N055T
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
gfs
VDS= 10 V; ID = 60 A, Note 1
Typ.
65
100
S
4850
pF
Ciss
Coss
TO-247AD Outline
Min.
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
Max.
954
pF
212
pF
36
ns
td(on)
Resistive Switching Times
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
35
ns
td(off)
RG = 5 Ω (External)
53
ns
38
ns
114
nC
30
nC
32
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 30 V, ID = 25 A
Qgd
TO-3P
Min.
Characteristic Values
Typ.
Max.
IS
VGS = 0 V
182
A
ISM
Pulse width limited by TJM
490
A
VSD
IF = 25 A, VGS = 0 V, Note 1
1.0
V
t rr
IF = 25 A, -di/dt = 100 A/µs
70
ns
2 - Drain
Tab - Drain
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Source-Drain Diode
Symbol
Test Conditions
TJ = 25° C unless otherwise specified)
3
Dim.
°C/W
0.25
2
Terminals: 1 - Gate
3 - Source
0.42 °C/W
RthJC
RthCS
1
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P (IXTQ) Outline
VR = 25 V, VGS = 0 V
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537
IXTH182N055T
IXTQ182N055T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
200
320
VGS = 10V
9V
8V
180
160
280
8V
240
120
ID - Amperes
140
ID - Amperes
VGS = 10V
9V
7V
100
80
6V
200
7V
160
120
6V
60
80
40
5V
20
40
0
5V
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
1
2
4
5
6
Fig. 4. RDS(on) Normalized to ID = 91A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
200
2.2
VGS = 10V
9V
8V
160
140
120
7V
100
80
VGS = 10V
2.0
RDS(on) - Normalized
180
ID - Amperes
3
VDS - Volts
VDS - Volts
6V
60
1.8
1.6
I D = 182A
1.4
I D = 91A
1.2
1.0
40
0.8
5V
20
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 91A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
2.4
140
VGS = 10V
15V - - - -
2.2
External Lead Current Limit for TO-263 (7-Lead)
120
TJ = 175ºC
100
1.8
ID - Amperes
RDS(on) - Normalized
2
1.6
1.4
80
External Lead Current Limit for TO-3P, TO-220, & TO-263
60
1.2
40
1
0.8
20
TJ = 25ºC
0
0.6
0
40
80
120
160
200
I D - Amperes
© 2006 IXYS CORPORATION All rights reserved
240
280
320
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXTH182N055T
IXTQ182N055T
Fig. 8. Transconductance
Fig. 7. Input Admittance
140
270
240
210
TJ = -40ºC
25ºC
125ºC
180
25ºC
100
g f s - Siemens
ID - Amperes
TJ = - 40ºC
120
150
120
80
150ºC
60
90
40
60
20
30
0
0
3.5
4
4.5
5
5.5
6
6.5
7
0
7.5
30
60
90
VGS - Volts
120
150
180
210
240
270
I D - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
300
10
270
9
VDS = 27.5V
240
8
I D = 25A
210
7
VGS - Volts
IS - Amperes
I G = 10mA
180
150
TJ = 150ºC
120
TJ = 25ºC
90
6
5
4
3
60
2
30
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0
10
20
VSD - Volts
40
50
60
70
80
90
100 110 120
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
1,000
10,000
f = 1 MHz
RDS(on) Limit @ VGS = 10V
C iss
I D - Amperes
Capacitance - PicoFarads
30
1,000
C oss
25µs
100
100µs
1ms
TJ = 175ºC
C rss
DC
10ms
TC = 25ºC
100
10
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
VDS - Volts
100
IXTH182N055T
IXTQ182N055T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
38
36
RG = 5Ω
36
VGS = 10V
VDS = 30V
32
30
I D = 50A
28
26
TJ = 25ºC
34
t r - Nanoseconds
t r - Nanoseconds
34
I D = 25A
RG = 5Ω
32
VGS = 10V
VDS = 30V
30
28
26
TJ = 125ºC
24
24
22
22
25
35
45
55
65
75
85
95
105
115
25
125
30
35
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
50
58
I D = 50A
48
54
I D = 25A
46
60
38
40
34
36
30
34
8
10
12
14
16
18
62
40
59
I D = 50A
38
25
20
35
tf
180
RG = 5Ω, VGS = 10V
70
160
95
50
105 115 125
175
58
38
54
TJ = 25ºC
34
44
I D - Amperes
© 2006 IXYS CORPORATION All rights reserved
48
I D = 25A
140
t f - Nanoseconds
40
40
200
150
120
125
100
100
I D = 50A
80
75
50
60
50
46
40
25
4
6
8
10
12
RG - Ohms
14
16
18
20
t d ( o f f ) - Nanoseconds
62
36
85
VDS = 30V
42
32
75
TJ = 125ºC, VGS = 10V
VDS = 30V
66
28
65
td(off) - - - -
tf
t d ( o f f ) - Nanoseconds
t f - Nanoseconds
74
td(off) - - - -
44
24
55
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
48
36
45
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
TJ = 125ºC
56
53
RG - Ohms
46
65
I D = 25A
42
42
6
68
44
80
20
VDS = 30V
46
t f - Nanoseconds
t r - Nanoseconds
50
t d ( o n ) - Nanoseconds
120
71
RG = 5Ω, VGS = 10V
t d ( o f f ) - Nanoseconds
VDS = 30V
4
td(off) - - - -
tf
100
50
74
td(on) - - - -
TJ = 125ºC, VGS = 10V
140
45
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
160
tr
40
I D - Amperes
IXTH182N055T
IXTQ182N055T
Fig. 19. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_182N055T (4V) 6-01-06-A.xls