Preliminary Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 480A Ω 1.9mΩ RDS(on) ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 75 V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C (Chip Capability) IL(RMS) IDM External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM IA EAS PD Maximum Ratings G S D 480 A 200 1500 A A TC = 25°C TC = 25°C 200 3 A J TC = 25°C 940 W Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. -55 ... +175 175 -55 ... +175 °C °C °C Features 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md = = t = 1 minute t = 1 second Mounting Torque Terminal Connection Torque Weight G = Gate S = Source z z z z z z z z D = Drain International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 75 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) © 2009 IXYS CORPORATION, All Rights Reserved z V TJ = 150°C VGS = 10V, ID = 100A, Note 1 z 1.5 5.0 V ±200 nA z Easy to Mount Space Savings High Power Density Applications 25 μA 2 mA z 1.9 mΩ z z DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications DS100193A(11/09) IXFN520N075T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 65 VDS = 10V, ID = 60A, Note 1 105 S 41 nF 4150 pF 530 pF 1.36 Ω 48 ns 36 ns 80 ns 35 ns 545 nC 177 nC 135 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 200A RG = 1Ω (External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 260A Qgd (M4 screws (4x) supplied) 0.16 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IRM IF = 150A, VGS = 0V QRM -di/dt = 100A/μs VR = 37.5V 520 A 1600 A 1.25 V 7 150 ns A 357 nC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN520N075T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 350 350 VGS = 15V VGS = 15V 10V 9V 300 250 250 8V ID - Amperes ID - Amperes 10V 9V 8V 300 200 7V 150 100 7V 200 150 6V 100 6V 50 50 5V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.7 1.0 1.5 2.0 2.5 3.0 VDS - Volts Fig. 3. Output Characteristics @ T J = 150ºC Fig. 4. RDS(on) Normalized to ID = 150A Value vs. Junction Temperature 350 2.2 VGS = 15V 10V 9V 300 VGS = 10V 2.0 250 1.8 8V 200 R DS(on) - Normalized ID - Amperes 0.5 VDS - Volts 7V 150 100 6V ID = 300A 1.6 ID = 150A 1.4 1.2 1.0 50 0.8 5V 0 0.0 0.2 0.4 0.6 0.8 1.0 0.6 1.2 1.4 -50 -25 0 25 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 150A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 220 2.2 200 2.0 160 1.8 1.6 ID - Amperes R DS(on) - Normalized External Lead Current Limit 180 TJ = 175ºC VGS = 10V 15V 1.4 1.2 140 120 100 80 60 TJ = 25ºC 40 1.0 20 0.8 0 0 50 100 150 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFN520N075T2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 200 180 180 160 160 TJ = 150ºC 25ºC - 40ºC 120 25ºC 140 g f s - Siemens 140 ID - Amperes TJ = - 40ºC 100 80 120 150ºC 100 80 60 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 220 Fig. 10. Gate Charge 10 300 VDS = 37.5V 9 250 I D = 260A 8 I G = 10mA 7 200 6 VGS - Volts IS - Amperes 100 ID - Amperes 150 5 4 TJ = 150ºC 100 3 TJ = 25ºC 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 100 200 VSD - Volts Fig. 11. Capacitance 400 500 600 Fig. 12. Forward-Bias Safe Operating Area 10,000 100.0 RDS(on) Limit Ciss 1,000 25µs 10.0 ID - Amperes Capacitance - NanoFarads 300 QG - NanoCoulombs Coss 100µs External Lead Limit 100 1ms 1.0 10 f = 1 MHz 10ms TJ = 175ºC Crss 100ms TC = 25ºC DC Single Pulse 0.1 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 VDS - Volts 100 IXFN520N075T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 180 180 RG = 1Ω , VGS = 10V 160 VDS = 37.5V 140 140 120 I 100 D t r - Nanoseconds t r - Nanoseconds RG = 1Ω , VGS = 10V 160 VDS = 37.5V = 200A 80 60 I D TJ = 125ºC 120 100 80 60 = 100A 40 40 20 20 TJ = 25ºC 0 0 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 600 240 td(on) - - - - 120 I D = 100A 40 32 0 30 5 6 7 8 9 100 I D = 200A 34 25 10 35 45 55 65 75 85 95 105 115 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf td(off) - - - - 140 40 120 38 TJ = 125ºC TJ = 25ºC 100 36 80 34 60 32 60 80 100 120 140 160 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 180 tf 160 40 200 td(off) - - - - TJ = 125ºC, VGS = 10V 500 500 VDS = 37.5V t d(off) - Nanoseconds 42 600 400 400 I D = 200A, 100A 300 300 200 200 100 100 0 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = 37.5V 70 125 600 180 RG = 1Ω, VGS = 10V 90 80 TJ - Degrees Centigrade 44 t f - Nanoseconds 110 RG - Ohms 46 40 120 36 100 4 130 VDS = 37.5V I D = 100A 80 3 td(off) - - - - 38 200 0 tf RG = 1Ω, VGS = 10V 40 t f - Nanoseconds t r - Nanoseconds 300 2 200 t d(off) - Nanoseconds 160 t d(on) - Nanoseconds 400 1 180 140 42 200 I D = 200A VDS = 37.5V 160 44 t f - Nanoseconds tr TJ = 125ºC, VGS = 10V 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 500 120 ID - Amperes IXFN520N075T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximum Transient Thermal Impedance .sadgsfgsf 0.300 Z (th )JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_520N075T2 (V9)11-09-09