Preliminary Technical Information TrenchMVTM Power MOSFET HiperFETTM IXFA130N10T IXFP130N10T VDSS ID25 = = 100V 130A Ω 9.1mΩ RDS(on) ≤ N-Channel Enhancement Mode Avalanche Rated Fast intrisic diode TO-263 (IXFA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VGSM Transient ± 30 V ID25 ILRMS IDM TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM 130 75 350 A A A IA EAS TC = 25°C TC = 25°C 65 750 A mJ PD TC = 25°C 360 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 3.0 2.5 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-220 TO-263 S (TAB) TO-220 (IXFP) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z z z Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Fast intrinsic diode Advantages z z z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 100 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 TJ = 150°C Applications V 4.5 V ± 200 nA 10 500 μA μA 9.1 mΩ z z z z z z z © 2008 IXYS CORPORATION, All rights reserved Easy to mount Space savings High power density Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier DS100020(07/08) IXFA130N10T IXFP130N10T Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) gfs VDS= 10V, ID = 60A, Note 1 Typ. 55 93 S 5080 pF Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz tr td(off) tf pF 95 pF 30 ns 47 ns 44 ns 28 ns 104 nC 1 - Gate 3 - Source 30 nC Dim. 29 nC Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 25A RG = 5Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 25A Qgd RthJC RthCH Max. 630 Crss td(on) TO-263 (IXFA) Outline Min. 0.42 TO-220 Pins: °C/W °C/W 0.50 Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) Min. Characteristic Values Typ. Max. IS VGS = 0V 130 A ISM Repetitive, pulse width limited by TJM 350 A VSD IF = 25A, VGS = 0V, Note 1 1.0 V trr IRM Qrr 67 ns 4.7 A 160 nC IF = 65A, -di/dt = 100A/μs VR = 0.5 • VDSS, VGS = 0V 2 - Drain 4, TAB - Drain TO-220 (IXFP) Outline Notes: 1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA130N10T IXFP130N10T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 280 130 VGS = 10V 8V 120 110 VGS = 10V 9V 240 100 ID - Amperes ID - Amperes 8V 200 90 80 7V 70 60 50 40 160 120 7V 80 30 6V 20 40 6V 10 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1 2 3 4 130 7 8 9 10 2.8 VGS = 10V 9V 8V 120 110 2.6 RDS(on) - Normalized 90 80 7V 70 60 50 VGS = 10V 2.4 100 ID - Amperes 6 Fig. 4. RDS(on) Normalized to ID = 65A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 6V 40 2.2 I D = 130A 2.0 1.8 I D = 65A 1.6 1.4 1.2 1.0 30 5V 20 0.8 0.6 10 0 0.4 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 65A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 140 3.0 External Lead Current Limit for TO-263 (7-Lead) VGS = 10V 2.8 TJ = 175ºC 15V - - - - 2.6 120 2.4 100 ID - Amperes RDS(on) - Normalized 5 VDS - Volts VDS - Volts 2.2 2.0 1.8 80 External Lead Current Limit for TO-3P, TO-220, & TO-263 60 1.6 1.4 40 TJ = 25ºC 1.2 20 1.0 0.8 0 0 40 80 120 160 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 200 240 280 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFA130N10T IXFP130N10T Fig. 8. Transconductance Fig. 7. Input Admittance 270 130 120 240 TJ = - 40ºC 25ºC 150ºC 100 g f s - Siemens ID - Amperes 210 TJ = - 40ºC 110 180 150 120 90 90 25ºC 80 70 60 150ºC 50 40 30 60 20 30 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 20 40 60 VGS - Volts 80 100 120 140 160 180 200 220 90 100 110 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 270 VDS = 50V 9 240 I D = 25A 8 210 I G = 10mA 180 VGS - Volts IS - Amperes 7 150 120 TJ = 150ºC 90 6 5 4 3 TJ = 25ºC 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 VSD - Volts 40 50 60 70 80 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads 30 Coss 100 0.10 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXFA130N10T IXFP130N10T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 62 65 RG = 5Ω 60 54 t r - Nanoseconds t r - Nanoseconds VGS = 10V VDS = 50V 55 50 45 40 I D RG = 5Ω 58 VGS = 10V = 50A VDS = 50V 50 TJ = 25ºC 46 42 38 34 35 TJ = 125ºC 30 I 30 D = 25A 26 25 22 25 35 45 55 65 75 85 95 105 115 25 125 30 35 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance TJ = 125ºC, VGS = 10V 38 47 80 38 I D = 25A 70 35 60 32 50 29 40 26 30 23 20 36 6 8 10 12 14 16 18 60 I D = 25A 34 56 32 52 I D = 50A 30 44 26 25 20 35 45 RG - Ohms 38 66 VDS = 50V 54 30 50 46 TJ = 25ºC 26 42 24 38 35 40 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 45 50 t f - Nanoseconds t f - Nanoseconds 58 RG = 5Ω, VGS = 10V t d(off) - Nanoseconds td(off) - - - - 30 95 105 115 40 125 170 tr 90 62 TJ = 125ºC 25 85 25A < I td(on) - - - - D < 50A 150 TJ = 125ºC, VGS = 10V VDS = 50V 80 130 70 110 I D = 25A 60 90 I 50 D = 50A 70 40 t d(off) - Nanoseconds 36 28 75 100 70 32 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 40 34 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 48 28 20 4 64 RG = 5Ω, VGS = 10V t d(off) - Nanoseconds 41 td(off) - - - - VDS = 50V t d(on) - Nanoseconds 44 I D = 50A 90 68 tf 50 VDS = 50V 100 t r - Nanoseconds td(on) - - - - t f - Nanoseconds 110 50 40 53 tr 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 130 120 40 ID - Amperes 50 30 30 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_130N10T (4V)07-29-08-A