Preliminary Technical Information IXFA110N15T2 IXFP110N15T2 TrenchT2TM HiperFET Power MOSFET VDSS ID25 = 150V = 110A Ω ≤ 13mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 150 V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C 110 A IDM TC = 25°C, pulse width limited by TJM 300 A IA TC = 25°C 50 A EAS TC = 25°C 800 mJ dV/dt IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C 15 V/ns PD TC = 25°C 480 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C TJ TL Tsold 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-263 TO-220 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g S (TAB) TO-220 G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z z z z International standard packages 175°C Operating Temperature High current handling capability Fast intrinsic Rectifier Dynamic dV/dt rated Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 150 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS 4.5 V ±200 nA 5 μA VDS = VDSS VGS = 0V RDS(on) V 150 μA TJ = 150°C VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 11 13 mΩ z z z Applications z z z z z z z © 2008 IXYS CORPORATION, All rights reserved Easy to mount Space savings High power density DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies High speed power switching applications DS100093(12/08) IXFA110N15T2 IXFP110N15T2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 55A, Note 1 75 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3Ω (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 115 S 8600 pF 685 pF 77 pF 33 ns 16 ns 33 ns 18 ns 150 nC 42 nC 46 nC 0.31 °C/W RthJC RthCH TO-263 (IXFA) Outline TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 110 A ISM Repetitive, Pulse width limited by TJM 440 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr IF = 55A, VGS = 0V IRM QRM -di/dt = 100A/μs VR = 75V 85 ns 6.8 A 290 nC TO-220 (IXFP) Outline Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA110N15T2 IXFP110N15T2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 110 VGS = 15V 10V 9V 8V 100 90 80 250 7V 70 ID - Amperes ID - Amperes VGS = 15V 10V 8V 300 60 50 6V 40 200 7V 150 100 30 20 50 5V 10 0 6V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 110 12 14 16 3.4 VGS = 15V 10V 9V 8V 100 90 VGS = 10V 3.0 2.6 70 RDS(on) - Normalized 80 ID - Amperes 10 Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 7V 60 50 40 30 20 6V I D = 110A 2.2 I D = 55A 1.8 1.4 1.0 0.6 10 0 0.2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 120 5.0 110 VGS = 10V 15V - - - - 4.5 TJ = 175ºC 100 4.0 90 3.5 ID - Amperes RDS(on) - Normalized 8 VDS - Volts VDS - Volts 3.0 2.5 80 70 60 50 40 2.0 30 1.5 TJ = 25ºC 1.0 20 10 0 0.5 0 50 100 150 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFA110N15T2 IXFP110N15T2 Fig. 7. Input Admittance 180 140 160 TJ = - 40ºC 140 120 TJ = 150ºC 25ºC - 40ºC 100 g f s - Siemens ID - Amperes Fig. 8. Transconductance 160 80 60 40 25ºC 120 100 150ºC 80 60 40 20 20 0 0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6 0 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 120 140 160 Fig. 10. Gate Charge VDS = 75V 9 300 I D = 55A 8 I G = 10mA 7 VGS - Volts 250 IS - Amperes 100 10 350 200 150 6 5 4 3 TJ = 150ºC 100 2 TJ = 25ºC 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 20 40 60 80 100 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000.0 f = 1 MHz RDS(on) Limit 10,000 25µs 100.0 Ciss ID - Amperes Capacitance - PicoFarads 80 ID - Amperes 1,000 Coss 100µs 10.0 1ms 100 1.0 TJ = 175ºC Crss 100ms 10ms TC = 25ºC Single Pulse 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1000 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_110N15T2(61)12-17-08 IXFA110N15T2 IXFP110N15T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 20 20 19 VGS = 10V VGS = 10V 19 VDS = 75V t r - Nanoseconds VDS = 75V 18 t r - Nanoseconds RG = 3.3Ω RG = 3.3Ω 17 I 16 = 110A D 15 I D = 55A TJ = 125ºC 18 17 16 TJ = 25ºC 14 15 13 14 12 25 35 45 55 65 75 85 95 105 115 55 125 60 65 70 TJ - Degrees Centigrade 90 50 I D = 55A 0 4 6 8 10 12 14 16 18 24 60 22 50 I D = 55A, 110A 40 30 18 30 20 16 20 25 35 45 t f - Nanoseconds 50 TJ = 125ºC TJ = 25ºC 40 18 17 80 85 95 105 115 20 125 90 95 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 100 105 td(off) - - - 210 TJ = 125ºC, VGS = 10V VDS = 75V 80 170 I D = 55A 60 130 40 90 I 30 20 20 110 0 D = 110A 50 10 2 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 60 t d(off) - Nanoseconds 21 75 100 70 VDS = 75V 70 85 250 tf td(off) - - - - RG = 3.3Ω, VGS = 10V 65 75 120 t f - Nanoseconds tf 60 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 80 55 55 TJ - Degrees Centigrade 23 19 70 VDS = 75V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 20 110 td(off) - - - - RG = 3.3Ω, VGS = 10V RG - Ohms 22 105 20 40 40 26 t f - Nanoseconds 60 120 2 100 t d(off) - Nanoseconds 70 I D = 110A 80 95 80 tf 80 VDS = 75V 160 90 28 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 10V 200 85 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 280 tr 80 ID - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 240 75 IXFA110N15T2 IXFP110N15T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_110N15T2(61)12-17-08