Advance Technical Information IXFK160N30T IXFX160N30T GigaMOSTM Power MOSFET VDSS ID25 = = 300V 160A Ω 19mΩ 200ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 300 300 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 160 440 A A IA EAS TC = 25°C TC = 25°C 40 3 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 1390 W -55 ... +150 150 -55 ... +150 °C °C °C G = Gate S = Source 300 260 °C °C Features 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G D (TAB) S PLUS247 (IXFX) (TAB) z z z z z D = Drain TAB = Drain International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 60A, Note 1 TJ = 125°C z z V 5.0 V ± 200 nA 50 µA 3 mA 19 mΩ Applications z z z z z z z © 2009 IXYS CORPORATION, All rights reserved Easy to Mount Space Savings High Power Density DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100127(03/09) IXFK160N30T IXFX160N30T Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 100 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz td(on) td(off) tf S 28 nF pF 125 pF 37 ns 38 ns 105 ns 25 ns 335 nC 123 nC 56 nC Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs 160 1770 Crss tr TO-264 (IXFK) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.09 RthJC RthCS °C/W °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 160 A ISM Repetitive, Pulse Width Limited by TJM 640 A VSD IF = 60A, VGS = 0V, Note 1 1.3 V trr QRM IRM 200 IF = 80A, -di/dt = 100A/µs VR = 75V, VGS = 0V Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T µC 13 A Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Dim. 4,931,844 5,017,508 5,034,796 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. ns 1.09 Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Millimeter Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK160N30T IXFX160N30T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 160 300 VGS = 10V 7V 140 VGS = 10V 7V 250 120 200 80 ID - Amperes ID - Amperes 6V 100 5.5V 60 6V 150 5.5V 100 40 50 20 5V 5V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 3.2 2 4 6 8 10 12 14 16 18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to ID = 80A Value vs. Junction Temperature 160 20 2.8 VGS = 10V 7V 140 2.6 VGS = 10V 2.4 6V RDS(on) - Normalized ID - Amperes 120 100 80 5V 60 40 2.2 I D = 160A 2.0 1.8 I D = 80A 1.6 1.4 1.2 1.0 0.8 20 0.6 0.4 0 0 1 2 3 4 5 6 -50 7 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 80A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 150 180 2.8 VGS = 10V 2.6 160 2.4 TJ = 125ºC 140 2.2 120 2.0 ID - Amperes RDS(on) - Normalized -25 VDS - Volts 1.8 1.6 1.4 100 80 60 1.2 TJ = 25ºC 1.0 40 20 0.8 0.6 0 0 40 80 120 160 200 ID - Amperes © 2009 IXYS CORPORATION, All rights reserved 240 280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFK160N30T IXFX160N30T Fig. 7. Input Admittance Fig. 8. Transconductance 200 300 TJ = - 40ºC 180 250 160 TJ = 125ºC 25ºC - 40ºC 120 g f s - Siemens ID - Amperes 140 100 80 60 200 25ºC 150 125ºC 100 40 50 20 0 0 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 0 6.2 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 Fig. 10. Gate Charge 10 350 VDS = 150V 9 300 I D = 80A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 100 ID - Amperes 200 150 TJ = 125ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 Fig. 11. Capacitance 150 200 250 300 350 Fig. 12. Forward-Bias Safe Operating Area 1,000 100,000 f = 1 MHz Ciss RDS(on) Limit 25µs 10,000 I D - Amperes Capacitance - PicoFarads 100 QG - NanoCoulombs VSD - Volts Coss 1,000 100 100µs 10 TJ = 150ºC TC = 25ºC Single Pulse Crss 100 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_160N30T(9E)3-23-09 IXFK160N30T IXFX160N30T Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All rights reserved IXYS REF: F_160N30T(9E)3-23-09